JMnic
Product Specification
Silicon PNP Power Transistors
2SA1962
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SC5242
・High
collector voltage: V
CEO
=-230V(Min)
APPLICATIONS
・Power
amplifier applications
・Recommend
for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
DESCRIPTION
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-230
-230
-5
-15
-1.5
130
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-8 A;I
B
=-0.8A
I
C
=-7A ; V
CE
=-5V
V
CB
=-230V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
55
35
30
360
MIN
-230
2SA1962
TYP.
MAX
UNIT
V
-3.0
-1.5
-5
-5
160
V
V
μA
μA
MHz
pF
h
FE-1
classifications
R
55-110
O
80-160
2
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