JMnic
Product Specification
Silicon PNP Power Transistors
2SA699 2SA699A
DESCRIPTION
・With
TO-202 package
・Complement
to type 2SC1226/1226A
APPLICATIONS
・Power
amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SA699
V
CBO
Collector-base voltage
2SA699A
2SA699
V
CEO
Collector-emitter voltage
2SA699A
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-40
-5
-2
-3
-0.6
10
150
-55~150
V
A
A
A
W
℃
℃
Open emitter
-50
-32
V
CONDITIONS
VALUE
-40
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SA699
I
C
=-1mA;I
E
=0
2SA699A
2SA699
I
C
=-10mA; I
B
=0
2SA699A
I
CBO
I
CEO
I
EBO
h
FE
C
OB
f
T
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
V
CB
=-20V; I
E
=0
V
CE
=-12V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=-5V;f=1MHz
I
E
=0.5A ; V
CB
=-5V
CONDITIONS
I
C
=-1.5A ;I
B
=-0.15A
I
C
=-2A ;I
B
=-0.2 A
2SA699 2SA699A
MIN
TYP.
-0.4
MAX
-1.0
-1.5
UNIT
V
V
V
(BR)CBO
Collector-base
breakdown voltage
-40
V
-50
-32
V
-40
-1
-100
-100
50
70
150
220
pF
MHz
μA
μA
μA
V
(BR)CEO
Collector-emitter
breakdown voltage
h
FE
classifications
P
50-100
Q
80-160
R
100-220
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA699 2SA699A
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA699 2SA699A
4
JMnic
Product Specification
Silicon PNP Power Transistors
2SA699 2SA699A
5