JMnic
Product Specification
Silicon PNP Power Transistors
2SA679 2SA680
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SC1079/1080
・High
power dissipation
APPLICATIONS
・For
audio power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SA679
V
CBO
Collector-base voltage
2SA680
2SA679
V
CEO
Collector-emitter voltage
2SA680
V
EBO
I
C
I
E
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-100
-5
-12
12
100
150
-65~150
V
A
A
W
℃
℃
Open emitter
-100
-120
V
CONDITIONS
VALUE
-120
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA679
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA680
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
E
=-10mA ;I
C
=0
I
C
=-10A; I
B
=-1A
I
C
=-10A ; V
CE
=-5V
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-2A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V; f=1.0MHz
I
C
=-2A ; V
CE
=-5V
I
C
=-0.1A ;I
B
=0
CONDITIONS
2SA679 2SA680
MIN
-120
TYP.
MAX
UNIT
V
-100
-5
-3.0
-2.5
-0.1
-0.1
40
15
900
6
pF
MHz
140
V
V
V
mA
mA
h
FE-1
Classifications
R
40-80
Y
70-140
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA679 2SA680
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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