time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 05/13/2013
4
IS31AP4991A
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply voltage, V
CC
Voltage at any input pin
Maximum junction temperature, T
JMAX
Storage temperature range, T
STG
Operating temperature range, T
A
Maximum power dissipation, SOP-8(25°C/85°C) (Note 2)
MSOP-8(25°C/85°C)
-0.3V
~ +6.0V
-0.3V
~ V
CC
+0.3V
150°C
-65°C
~ +150°C
−40°C
~ +85°C
720mW/380mW
590mW/310mW
Note 1:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2:
Thermal simulation @ 25°C /85°C ambient temperature, still air convection, 2s2p boards according to JESD51. The Pd (max by package)
is evaluated by (Tjmax-Ta)/Theta-Ja.
ELECTRICAL CHARACTERISTICS
The following specifications apply for C
IN
= 0.1μF, R
IN
= R
F
= 20kΩ, C
BYPASS
= 0.47μF, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=5V (Note 3 or specified)
Symbol
I
CC
I
SDB
V
SD_H
V
SD_L
V
OS
Po
t
WU
THD+N
PSRR
Parameter
Quiescent power supply current
Shutdown current
Shutdown voltage input high
Shutdown voltage input low
Output offset voltage
Output power (8Ω)
Wake-up time (Note 4)
Total harmonic distortion+noise
(Note 4)
Power supply rejection ratio
(Note 4)
THD+N = 1%; f = 1kHz
THD+N = 10%; f = 1kHz
C
BYPASS
= 0.47μF
Po = 0.5Wrms; f = 1kHz
V
ripple p-p
= 200mV
Input Grounded
f = 217Hz
f = 1kHz
1.15
1.40
100
0.074
56
68
250
Condition
V
CC
= 0V, Io = 0A, no Load
V
SDB
= GND, R
L
=
∞
V
CC
= 5.5V
V
CC
= 2.7V
1.4
0.4
15
Min.
Typ.
3.0
1
Max.
Unit
mA
μA
V
V
mV
W
ms
%
dB
The following specifications apply for C
IN
= 0.1μF, R
IN
= R
F
= 20kΩ, C
BYPASS
= 0.47μF, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=3V (Note 3 or specified)
Symbol
I
CC
I
SDB
Po
t
WU
THD+N
Parameter
Quiescent power supply current
Shutdown current
Output power (8Ω)
Wake-up time (Note 4)
Total harmonic distortion+noise
(Note 4)
Condition
V
CC
= 0V, Io = 0A, no Load
V
SDB
= GND, R
L
=
∞
THD+N = 1%; f = 1kHz
THD+N = 10%; f = 1kHz
C
BYPASS
= 0.47μF
Po = 0.3Wrms; f = 1kHz
380
490
90
0.076
200
Min.
Typ.
2.2
1
Max.
Unit
mA
μA
mW
ms
%
Note 3:
Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other
temperature range, are guaranteed by design, characterization and process control.
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