Ordering number : ENA1503
LE25CB1282
Overview
Serial SPI EEPROM (SPI Bus)
(128Kbit)
The LE25CB1282 is a 128Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation
and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
compatible with SPI bus protocol, therefore, it is best suited for applications that require small-scale rewritable nonvolatile
parameter memory. Moreover, the LE25CB1282 has a 64 bytes page rewrite function that provides rapid data rewriting.
Features
•
Capacity
•
Single supply voltage
•
Serial interface
•
Operating clock frequency
•
Low current dissipation
•
Page write function
•
Rewrite time
•
Number of rewrite times
•
Data retention period
•
High reliability
: 128Kbits (16K×8bits)
: 2.7V to 5.5V
: SPI Mode0, Mode3 supported
: 5MHz
: Standby
: 5μA (max.)
: Active (Read)
: 3mA (max.)
: Active (Rewrite) : 5mA (max.)
: 64bytes
: 5ms
: 10
6
times
: 20years
: Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325)
Incorporates a feature to prohibit write operations under low voltage conditions.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
70109 SY /20090609-S00001 No.NA1503-1/13
LE25CB1282
Specifications
Absolute Maximum Rating/If
an electrical stress exceeding the maximum rating is applied, the device may be damaged.
Parameter
Storage temperature
Supply voltage
DC input voltage
Overshoot voltage (below 20ns)
Symbol
Conditions
Ratings
-65 to +150
-0.5 to 6.5
-0.5 to 5.5
-1.0 to 6.5
Unit
°C
V
V
V
Operating Conditions
Parameter
Operating temperature
Operating supply voltage
Symbol
Conditions
Ratings
-40 to +85
2.7 to 5.5
Unit
°C
V
DC Electrical Characteristics
Parameter
Supply current when reading
Symbol
ICCR
Conditions
CS = 0.1VDD, HOLD = WP = 0.9VDD
SI = 0.1VDD/0.9VDD, SO = Open
Operating frequency = 5MHz,
Supply current when writing
CMOS standby current
ICCW
ISB
ILI
ILO
VIL
VIH
VOL
VOH
VDD = VDD Max
VDD = VDD max., VIN = 0.1VDD/0.9VDD
tWC = 5ms
CS = VDD, VIN = VDD or VSS
VDD = VDD Max
Input leakage current
VIN = VSS to VDD, VDD = VDD max.
VIN = VSS to VDD, VDD = VDD max.
VDD = VDD max.
VDD = VDD min.
IOL = 3.0mA, VDD = 2.7V to 5.5V
IOH = -0.4mA, VDD = 2.7V to 5.5V
0.8VDD
-0.3
0.7VDD
2
μA
μA
V
V
V
V
5
5
mA
μA
min
typ
max
3
Unit
mA
Output leakage current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
2
0.3VDD
VDD+0.3
0.4
Capacitance
at Ta = 25°C, f = 1.0MHz
Parameter
Output pin capacitance
Input pin capacitance
Symbol
CDQ
CIN
VDQ = 0V
VIN = 0V
Conditions
min
typ
max
12
6
Unit
pF
pF
Note : These parameters are sampled and not 100% tested.
AC Electrical Characteristics
Input pulse level
Input pulse rise/fall time
Output detection voltage
Output load
0.2×VDD to 0.8×VDD
10ns
0.5×VDD
30pF
No.NA1503-3/13
LE25CB1282
AC Characteristics
(at FCLK = 5MHz)/VDD = 2.7V to 5.5V
Parameter
Clock frequency
SCK logic high level pulse width
SCK logic low level pulse width
Input signal rise/fall time
CS setup time
SCK setup time
Data setup time
Data hold time
CS hold time
SCK hold time
CS standby pulse width
CS output high impedance time
SCK output data time
Output data hold time
WP setup time
WP hold time
HOLD setup time
HOLD hold time
HOLD output low impedance time
HOLD output high impedance time
Write cycle time
SCK output low impedance time
Symbol
FCLK
tCLHI
tCLLO
tRF
tCSS
tCLS
tDS
tDH
tCSH
tCLH
tCPH
tCHZ
tV
tHO
tWPS
tWPH
tHS
tHH
tHLz
tHHz
tWC
tCLZ
0
0
30
30
30
30
50
100
5
90
90
20
30
90
90
90
150
80
90
90
1
Conditions
min
typ
max
5
Unit
MHz
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
Table 1 Command Settings
Command
Write enable
(WREN)
Write disable
(WRDI)
Status register read
(RDSR)
Status register write
(WRSR)
Read
(READ)
Write
(WRITE)
Explanatory notes for Table 1
The “h” following each code indicates that the number given is in hexadecimal notation.
Addresses A15 and A14 for all commands are “don’t care.”
*1: “PD” stands for page program data. Any amount of data from 1 to 64 bytes is input.
1st bus
cycle
06h
04h
05h
01h
03h
02h
DATA
A15-A8
A15-A8
A7-A0
A7-A0
PD *1
PD *1
PD *1
PD *1
2nd bus
cycle
3rd bus
cycle
4th bus
cycle
5th bus
cycle
6th bus
cycle
nth bus
cycle
No.NA1503-4/13
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