A Product Line of
Diodes Incorporated
ZXMS6004FF
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
IN
= 5V)
Clamping energy
60 V
500 mΩ
1.3 A
90mJ
Description
The ZXMS6004FF is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004FF is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
•
•
•
•
•
•
•
•
•
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
S
D
IN
Pinout - top view
Ordering information
Device
Part mark
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity per reel
ZXMS66004FFTA
1K6
3,000 units
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ZXMS6004FF
Functional block diagram
D
Over-voltage
Protection
IN
ESD
Protection
Over-temperature
Protection
Logic
Over-current
Protection
dV/dt
Limitation
S
Application information
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
μC
compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
DS
to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather than
by the protection circuitry. This does not compromise the product’s ability to self-protect at low
V
DS
.
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ZXMS6004FF
Absolute maximum ratings
Parameter
Continuous Drain-Source voltage
Drain-Source voltage for short circuit protection
Continuous input voltage
Continuous input current
-0.2V≤V
IN
≤6V
V
IN
<-0.2V or V
IN
>6V
Operating temperature range
Storage temperature range
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Pulsed drain current @ V
IN
=3.3V
Pulsed drain current @ V
IN
=5V
Continuous source current (Body Diode)
(a)
Pulsed dource current (Body Diode)
Unclamped single pulse inductive energy,
Tj=25°C, I
D
=0.5A, V
DD
=24V
Electrostatic discharge (Human body model)
Charged device model
Symbol
V
DS
V
DS(SC)
V
IN
I
IN
No limit
│I
IN
│≤2
T
j
,
T
stg
P
D
P
D
I
DM
I
DM
I
S
I
SM
E
AS
V
ESD
V
CDM
-40 to +150
-55 to +150
0.83
6.66
1.5
12.0
2
2.5
1
5
90
4000
1000
°C
°C
W
mW/°C
W
mW/°C
A
A
A
A
mJ
V
V
Limit
60
36
-0.5 ... +6
Unit
V
V
V
mA
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to case
(c)
NOTES
Symbo
R
θJA
R
θJA
R
θJC
Value
150
83
44
Unit
°C/W
°C/W
°C/W
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
conditions.
(c) Thermal resistance from junction to the mounting surface of the drain pin.
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ZXMS6004FF
Recommended operating conditions
The ZXMS6004FF is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol
V
IN
T
A
V
IH
V
IL
V
P
Description
Input voltage range
Ambient temperature range
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
36
Units
V
°C
V
V
V
Characteristics
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ZXMS6004FF
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Static Characteristics
Drain-Source clamp voltage
Off-state drain Ccrrent
Off-state drain current
Input threshold voltage
Input current
Input current
Input current while over
temperature active
Static Drain-Source on-state
resistance
Static Drain-Source on-state
resistance
Continuous drain current
(a)
Continuous drain cCurrent
(a)
Symbol
Min
Typ
Max
Unit
Conditions
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
60
65
70
500
1
V
nA
μA
V
μA
μA
μA
mΩ
mΩ
A
A
A
A
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=36V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+3V
V
IN
=+5V
V
IN
=+5V
V
IN
=+3V, I
D
=0.5A
V
IN
=+5V, I
D
=0.5A
V
IN
=3V; T
A
=25°C
V
IN
=5V; T
A
=25°C
V
IN
=3V; T
A
=25°C
V
IN
=5V; T
A
=25°C
V
IN
=+3V,
V
IN
=+5V
V
DD
=12V, I
D
=0.5A,
V
GS
=5V
0.7
1
60
120
1.5
100
200
220
R
DS(on)
R
DS(on)
I
D
I
D
I
D
I
D
I
D(LIM)
I
D(LIM)
t
d(on)
t
r
t
d(off)
f
f
0.9
1.0
1.2
1.3
0.7
1
400
350
600
500
Continuous drain current
(b)
Continuous drain current
(b)
Current limit
Current limit
(c)
Dynamic characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes:
1.7
2.2
5
10
45
15
A
A
μs
μs
μs
μs
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
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