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FEATURES
Low cost
GALAXY ELECTRICAL
RGP50A- - - RGP50M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
5.0
A
FAST RECOVERY RECTIFIERS
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
R-6
MECHANICAL DATA
Case:JEDEC
R-6,molded
plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight:
0.072 ounces,2.04 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RGP
50A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=55
RGP
50B
100
70
100
RGP
50D
200
140
200
RGP
50G
400
280
400
5.0
RGP
50J
600
420
600
RGP
50K
800
560
800
RGP
50M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@
5.0
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
300
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
32
10
- 55---- +125
- 55---- + 150
500
V
A
ns
pF
／Ｗ
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number
1761124
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
t
rr
+0.5A
RGP50A- - - RGP50M
FIG.1 --REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
D.U.T.
(+)
50VDC
(APPROX)
(-)
( - )
0
1
N.1.
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
( +)
-0.25A
-1.0A
1cm
NOTE
S:1.RE TIM =7ns M
SE E
AX.INP IM E AN =1M
UT P D CE
Ω.22pF.
2.RE TIM =10ns M
SE E
AX.SOUR IM E
CE P DANC =500Ω.
E
SE TIM BASEFOR50/100 ns /cm
T E
FIG.2 --PEAK FORWARD SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT
FIG.3--TYPICAL FORWARD CHARACTERISTICS
PEAK FORWARD CURGE CURRENT
AMPERES
500
8.3ms Single Half
Sine-Wave
100
10
4
2
1.0
400
300
AMPERES
200
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.7
0.8 1.0 1.2
1.4 1.6
1.7
100
T
J
=25
Pulse Width=300uS
0
1
5
10
50
100
NUMBER OF CYCIES AT 60Hz
FIG.4--FORWARD CURRENT DERATING CURVE
INSTANTANEOUS FORWARE CURRENT
FIG.5--TYPICAL REVERSE CHARACTEISTICS
AVERAGE FORWARD CURRENT
AMPERES
5.0
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
T
J
=25
f=1MHz
2.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
REVERSE VOLTAGE,VOLTS
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Document Number
1761124
BL
GALAXY ELECTRICAL
2.
MCU
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