SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4107, REV. -
SHD626000
SHD626000D
SHD626000N
SHD626000P
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION:
A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
•
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
•
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
•
High Temperature Option
- Maximum operation & storage temperature can be increased to 250
o
C;
use part number prefix as SHDT
•
High Frequency Option
- Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
•
Ceramic Seal Option
– For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
RATING
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C, for part numbers with P and
N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C, for part numbers with Single
and D suffixes)
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10µs, Pulse) per leg, T
C
= 25
O
C
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE
For Common Cathode/Anode Configurations)
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
ALL RATINGS ARE @ T
C
= 25
°C
UNLESS OTHERWISE SPECIFIED.
SYMBOL
PIV
I
O
I
O
I
FRM
I
FSM
MAX.
300
20
10
45
100
UNITS
Volts
Amps
Amps
Amps
Amps
C
T
P
d
R
θ
JC
Top, Tstg
400
30
4.8
-55 to +175
pF
W
°C/W
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP, Pulsed
(I
f
= 5 A PER LEG) V
f
MAXIMUM FORWARD VOLTAGE DROP, Pulsed
(I
f
= 10 A PER LEG) V
f
T
J
= 25
°C
T
J
=150°C
T
J
= 25
°C
T
J
= 150
°C
TYP
1.25
1.20
1.50
1.55
0.04
0.12
23
MAX.
1.40
1.35
1.70
1.75
0.40
2.00
N/A
UNITS
Volts
Volts
mA
nC
MAXIMUM REVERSE CURRENT (I
r
@ 300V PIV PER LEG) T
J
= 25
°C
T
J
= 150
°C
TOTAL CAPACITIVE CHARGE (V
R
=200V I
F
=10A di/dt=200A/µs T
J
=25°C) Q
C
per
leg
•
221 WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4107, REV. -
SHD626000
SHD626000D
SHD626000N
SHD626000P
MECHANICAL DIMENSIONS
TO-257
.150 (3.81
.140 3.56)
.200 (5.08
Dia.
.420 (10.67
.410 10.41)
.190 4.82)
.045 (1.14
.035 0.89)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.665 (16.89
.645 16.38)
.430 (10.92
.410 10.41)
1
2
3
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.120(3.05) BSC
PINOUT TABLE
TYPE
SINGLE RECTIFIER
DUAL RECTIFIER/COMMON CATHODE (P)
DUAL RECTIFIER/COMMON ANODE (N)
DUAL RECTIFIER/DOUBLER (D)
PIN 1
CATHODE
ANODE 1
CATHODE 1
ANODE
PIN 2
ANODE
COMMON
CATHODE
COMMON
ANODE
ANODE/
CATHODE
PIN 3
ANODE
ANODE 2
CATHODE 2
CATHODE
SCHEMATIC
1
2
SINGLE
3
1
2
3
COMMON CATHODE
1
2
3
COMMON ANODE
3
2
DOUBLER
1
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
•
221 WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-mail Address - sales@sensitron.com
•
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