Fast Page DRAM, 256KX4, 100ns, CMOS, CDSO20
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Reach Compliance Code | not_compliant |
| Maximum access time | 100 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDSO-N20 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 4 |
| Number of terminals | 20 |
| word count | 262144 words |
| character code | 256000 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | SON |
| Encapsulate equivalent code | SOLCC20/26,.35 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 512 |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.001 A |
| Maximum slew rate | 0.06 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| MT4C4256EC10/883C | MT4C4256C10/883C | MT4C4256C8/883C | |
|---|---|---|---|
| Description | Fast Page DRAM, 256KX4, 100ns, CMOS, CDSO20 | Fast Page DRAM, 256KX4, 100ns, CMOS, CDIP20 | Fast Page DRAM, 256KX4, 80ns, CMOS, CDIP20 |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Micron Technology | Micron Technology | Micron Technology |
| Reach Compliance Code | not_compliant | unknown | unknown |
| Maximum access time | 100 ns | 100 ns | 80 ns |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDSO-N20 | R-XDIP-T20 | R-XDIP-T20 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 1048576 bit | 1048576 bit | 1048576 bit |
| Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| memory width | 4 | 4 | 4 |
| Number of terminals | 20 | 20 | 20 |
| word count | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| organize | 256KX4 | 256KX4 | 256KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | SON | DIP | DIP |
| Encapsulate equivalent code | SOLCC20/26,.35 | DIP20,.3 | DIP20,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE | IN-LINE |
| power supply | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 512 | 512 | 512 |
| Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| Maximum standby current | 0.001 A | 0.001 A | 0.001 A |
| Maximum slew rate | 0.06 mA | 0.06 mA | 0.07 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | YES | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
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