BAS40.../BAS140W
Silicon Schottky Diode
•
General-purpose diode for high-speed switching
•
Circuit protection
•
Voltage clamping
•
High-level detecting and mixing
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAS140W
BAS40-02L
BAS40
!
BAS40-04
!
BAS40-05
BAS40-05W
!
BAS40-06
BAS40-06W
!
,
,
,
,
,
,
BAS40-07
BAS40-07W
"
!
,
,
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BAS140W
BAS40
BAS40-02L
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS40-07
BAS40-07W
1
Pb-containing
Package
SOD323
SOT23
TSLP-2-1
SOT23
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
Configuration
single
single
single, leadless
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
L
S
(nH)
1.8
1.8
0.4
1.8
1.8
1.4
1.8
1.4
2
1.6
Marking
white 4
43s
FF
44s
45s
45s
46s
46s
47s
47s
package may be available upon special request
1
2007-04-19
BAS40.../BAS140W
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
t
≤
10ms
Total power dissipation
BAS140W,
T
S
≤
113°C
BAS40, BAS40-07,
T
S
≤
81°C
BAS40-02L,
T
S
≤
127°C
BAS40-04, BAS40-06,
T
S
≤
56°C
BAS40-06W,
T
S
≤
106°C
BAS40-05,
T
S
≤
31°C
BAS40-05W,
T
S
≤
98°C
BAS40-07W,
T
S
≤
118°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS140W
BAS40, BAS40-07
BAS40-02L
BAS40-04, BAS40-06
BAS40-06W
BAS40-05
BAS40-05W
BAS40-07W
1
For
Symbol
V
R
I
F
I
FSM
P
tot
Value
40
120
200
Unit
V
mA
mW
250
250
250
250
250
250
250
250
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
Symbol
R
thJS
Value
≤
150
≤
275
≤
90
≤
375
≤
175
≤
475
≤
205
≤
125
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-04-19
BAS40.../BAS140W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
Forward voltage matching
1)
I
F
= 10 mA
∆
V
F
V
F
250
350
600
-
310
450
720
-
380
500
1000
20
mV
I
R
-
-
1
µA
V
(BR)
40
-
-
V
typ.
max.
Unit
AC Characteristics
Diode capacitance
V
R
= 0 ,
f
= 1 MHz
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
Charge carrier life time
I
F
= 25 mA
1
∆V
C
T
R
F
τ
rr
-
-
-
3
10
-
5
-
100
pF
Ω
ps
F
is the difference between lowest and highest
V
F
in a multiple diode component.
3
2007-04-19
BAS40.../BAS140W
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
BAS 40...
EHB00040
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 10 kHz
10
3
r
f
Ω
BAS 40...
EHB00041
5
C
T
pF
4
10
2
3
2
10
1
1
0
0
10
20
V
V
R
30
10
3
0.1
1
10
mA 100
Ι
F
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
-4
A
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
BAS 40...
EHB00039
10
3
Ι
R
µ
A
10
2
T
A
= 150 C
10
-5
I
R
10
1
10
-6
85 C
10
0
10
-7
VR = 40V
30V
20V
10V
10
-1
25 C
10
-8
0
25
50
75
100
°C
150
10
-2
0
10
20
30
V
V
R
40
T
A
4
2007-04-19
BAS40.../BAS140W
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
0.8
V
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
2
BAS 40...
EHB00038
Ι
F
mA
10
1
0.6
0.5
0.4
IF = 40 mA
10 mA
1 mA
0.1 mA
10 µA
1 µA
V
F
10
0
0.3
T
A
= -40 ˚C
25 ˚C
85 ˚C
150 ˚C
0.2
10
-1
0.1
0
-50
-25
0
25
50
75
100
°C
150
10
-2
0.0
0.5
1.0
V
V
F
1.5
T
A
Forward current
I
F
=
ƒ
(T
S
)
BAS140W
Forward current
I
F
=
ƒ
(T
S
)
BAS40, BAS40-07
140
mA
140
mA
100
100
I
F
80
I
F
80
60
60
40
40
20
20
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2007-04-19
NXP MCU
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