BUK856-450IX datasheet, PDF - EEWORLD Datasheet

BUK856-450IX: DescriptionTRANSISTOR 15 A, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

Download Datasheet Parametric Compare View All

BUK856-450IX Overview

TRANSISTOR 15 A, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	VOLTAGE CLAMPING
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)	8000 ns
Gate emitter threshold voltage maximum	4.5 V
Gate-emitter maximum voltage	12 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AUTOMOTIVE IGNITION
Transistor component materials	SILICON
Maximum off time (toff)	8000 ns
Nominal off time (toff)	5500 ns
VCEsat-Max	1.8 V
Base Number Matches	1

	BUK856-450IX	BUK854-500IS
Description	TRANSISTOR 15 A, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor	TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	15 A	15 A
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE
Maximum landing time (tf)	8000 ns	6000 ns
Gate emitter threshold voltage maximum	4.5 V	5.5 V
Gate-emitter maximum voltage	12 V	30 V
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	125 W	85 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AUTOMOTIVE IGNITION	AUTOMOTIVE IGNITION
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	8000 ns	4500 ns
Nominal off time (toff)	5500 ns	3500 ns
VCEsat-Max	1.8 V	2 V

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components