TRANSISTOR,BJT,PNP,250V V(BR)CEO,1A I(C),TO-205AD
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 250 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 5 W |
| Maximum power dissipation(Abs) | 0.8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
| VCEsat-Max | 0.5 V |
| Base Number Matches | 1 |
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