FDP6688/FDB6688
August 2001
PRELIMINARY
FDP6688/FDB6688
30V N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
.
Features
•
48 A, 30 V.
R
DS(ON)
= 5.0 mΩ @ V
GS
= 10 V
R
DS(ON)
= 6.5 mΩ @ V
GS
= 4.5 V
•
Critical DC electrical parameters specified at
elevated temperature
•
High performance trench technology for extremely
low R
DS(ON)
•
175°C maximum junction temperature rating
Applications
•
Synchronous rectifier
•
DC/DC converter
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
(Note 4)
(Note 1)
(Note 1)
Ratings
30
±
16
96
280
93
0.48
–55 to +175
Units
V
V
A
W
W/°C
°C
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJ
C
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDP6688
FDB6688
Device
FDP6688
FDB6688
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
©2001
Fairchild Semiconductor Corporation
FDP6688/FDB6688 Rev B(W)
FDP6688/FDB6688
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
(Note 1)
Test Conditions
V
DD
= 15 V,
I
D
= 21 A
Min
Typ
Max Units
370
21
mJ
A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
I
D
= 250
µA
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
V
GS
= 0 V,
30
23
10
100
–100
V
mV/°C
µA
nA
nA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= –16 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 48 A
V
GS
= 4.5 V,
I
D
= 45 A
V
GS
= 10V, I
D
= 48 A, T
J
= 125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 48 A
1
2
–6.8
3.5
4.6
5.1
3
V
mV/°C
5
6.5
9
mΩ
I
D(on)
g
FS
60
135
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
3682
939
374
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
16
11
55
43
28
20
88
68
50
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 48 A,
36
11
14
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 48 A
Voltage
0.9
96
1.3
A
V
Notes:
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3.
Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6688/FDB6688 Rev. B(W)
FDP6688/FDB6688
Typical Characteristics
280
V
GS
= 10V
6.0V
I
D
, DRAIN CURRENT (A)
210
5.0V
4.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
V
GS
= 4.0V
1.4
4.5V
1.2
5.0V
6.0V
1
10V
140
4.0V
70
3.5V
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.8
0
70
140
I
D
, DRAIN CURRENT (A)
210
280
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
1.8
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= 48A
V
GS
=10V
R
DS(ON)
ON-RESISTANCE (OHM)
,
0.010
T
A
= 125
o
C
0.008
T
A
= 25
o
C
0.006
I
D
= 24A
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
0.004
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
90
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
75
I
D
, DRAIN CURRENT (A)
125
o
C
60
T
A
= 55
o
C
25 C
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
1
45
30
25
o
C
0.1
-55
o
C
0.01
15
0
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6688/FDB6688 Rev. B(W)
FDP6688/FDB6688
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 48A
8
V
DS
= 10V
15V
5000
f = 1MHz
V
GS
= 0V
4000
20V
CAPACITANCE (pF)
3000
C
ISS
6
4
2000
C
OSS
1000
C
RSS
2
0
0
10
20
30
40
50
60
70
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
100µs
10ms
100m
1s
10s
DC
1000
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
100
10s
DC
10
V
GS
= 10V
SINGLE PULSE
R
θJC
= 1.6
o
C/W
T
A
= 25
o
C
1
100
100µs
10ms
100m
1s
10
V
GS
= 10V
SINGLE PULSE
R
θ
JC
= 1.6
o
C/W
T
A
= 25
o
C
1
0.1
1
10
V
D S
, DRAIN-SOURCE VOLTAGE (V)
100
0.1
1
10
V
D S
DRAIN-SOURCE VOLTAGE (V)
,
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.6 °C/W
P(pk
t
1
t
2
SINGLE PULSE
0.01
T
J
- Tc = P * R (t)
θJC
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6688/FDB6688 Rev. B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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