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TP2535N3P016

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size124KB,4 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

TP2535N3P016 Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

TP2535N3P016 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance30 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)25 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power consumption environment1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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