2.4/5 GHz 802.11a/b/g/n
WLAN Power Amplifier
Data Sheet - Rev 2.1
AWL6951
FEATURES
•
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•
•
•
•
•
•
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3.3 % EVM @ P
OUT
= +19 dBm with IEEE 802.11a
64 QAM OFDM at 54 Mbps
2.9 % EVM @ P
OUT
= +20 dBm with IEEE 802.11g
64 QAM OFDM at 54 Mbps
-36 dBr ACPR 1st Sidelobe, +21 dBm, with 802.11b
CCK/DSSS Root Cosine Filtering, 1 Mbps
-54 dBr ACPR 2nd Sidelobe, +21 dBm, with 802.11b
CCK/DSSS Root Cosine Filtering, 1 Mbps
32 dB of Linear Power Gain at 2.4 GHz
29 dB of Linear Power Gain at 5 GHz
Single +3.3 V Supply
Operational Voltage Range Extended to +4.4 V Max
Dual Temperature-Compensated Linear Power
Detectors
50
Ω
- Matched RF Ports
1 kV ESD Rating (HBM)
4 mm x 4 mm x 1.3 mm Surface Mount Module
802.11a/b/g/n WLAN: Notebooks, VoIP Handsets,
PDA Mobile Phones
AW
L6
951
M22 Package
16 Pin 4 mm x 4 mm x 1.3 mm
Surface Mount Module
APPLICATIONS
PRODUCT DESCRIPTION
The ANADIGICS AWL6951 dual band power amplifier is The AWL6951 is manufactured using advanced InGaP
a high performance InGaP HBT power amplifier module HBT technology that offers state-of-the-art reliability,
designed for transmit applications in the 2.4-2.5 GHz temperature stability and ruggedness.
and 4.9-5.9 GHz band. Matched to 50
at all RF inputs
2.4 GHz
PA
and outputs, the part requires no additional RF matching
V
CC
Power Detector
GND
On/Off
components off-chip, making the AWL6951 the world’s
simplest dual band PA module implementation available.
Bias Control
The PA exhibits unparalleled linearity and efficiency for
IEEE 802.11g, 802.11b and 802.11a WLAN systems
GHz
2.4 GHz
Matching
Matching
under the toughest signal configurations within these
2.4
RF
IN
Network
Network
RF
OUT
standards.
The power detectors are temperature compensated on
chip, enabling separate single-ended output voltages
for each band with excellent accuracy over a wide
range of operating temperatures. The PA is biased by
a single +3.3 V supply and consumes ultra-low current
in the OFF mode.
5 GHz
RF
IN
Matching
Network
Matching
Network
5 GHz
RF
OUT
Bias Control
GND
PA
On/Off
V
CC
5 GHz
Power Detector
Figure 1: Block Diagram and Pinout
09/2007
AWL6951
Table 1: Pin Description
PIN
1
2
NAME
GND
RF
IN
2G
DESCRIPTION
Ground
2 GHz RF Input. ESD structures on this pin provide a DC path to ground. Avoid
applying DC voltage to this pin. RF is internally matched to 50
and AC coupled to
the input stage. Route RF traces as coplanar waveguide using adjacent ground pins.
5 GHz RF Input. AC coupled input stage internally matched to 50
.
Route as coplanar
waveguide using adjacent ground pins. Although the input stage is AC coupled, a
shunt inductive matching element included inside the PA provides a DC path to ground
at this pin.
Ground
5 GHz Power Control. Power amplifier power control pin. The recommended use is for
on/off control of the PA. Nominally, 0 V applied will turn amplifier completely off; a
voltage of 2.0 V and above will set the PA to maximum output capability. Current draw
on this pin is approximately 0.5 mA at +3.3 V.
Ground
5 GHz Supply Voltage. Bias for power transistors of the 5 GHz PA.
5 GHz Power Detector Output. DC coupled power detector output. An emitter follower
BJT supplies the output for this pin. Output impedance is 2 k.
5 GHz RF Output. AC coupled output stage internally matched to 50
.
Route as
coplanar waveguide using adjacent ground pins. Although the output stage is AC
coupled, a shunt inductive matching element included inside the PA provides a DC
path to ground at this pin.
Ground
Ground
2 GHz RF Output. ESD structures on this pin provide a DC path to ground. Avoid
applying DC voltage to this pin. RF is internally matched to 50
and AC coupled to
the output stage. Route RF traces as coplanar waveguide using adjacent ground pins.
2 GHz Power Detector Output. DC coupled power detector output. An emitter follower
BJT supplies the output for this pin. Output impedance is 2 k.
2 GHz Power Supply. Bias for power transistors of the 2 GHz PA.
Ground
2 GHz Power Control. Power amplifier power control pin. The recommended use is for
on/off control of the PA. Nominally, 0 V applied will turn amplifier completely off; a
voltage of 2.0 V and above will set the PA to maximum output capability. Current draw
on this pin is approximately 0.5 mA at +3.3 V.
3
4
5
6
7
8
RF
IN
5G
GND
PA
ON
5G
GND
V
CC
5G
DET
OUT
5G
9
10
11
12
13
14
15
16
RF
OUT
5G
GND
GND
RF
OUT
2G
DET
OUT
2G
V
CC
2G
GND
PA
ON
2G
2
Data Sheet - Rev 2.1
09/2007
AWL6951
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
DC Power Supply (V
CC
2G, V
CC
5G)
Power Control Voltage (PA
ON
2G, PA
ON
5G)
DC Current Consumption
RF Input Level (RF
IN
2G, RF
IN
5G)
Operating Case Temperature
Storage Temperature
ESD Tolerance
MIN
-
-
-
-
-40
-55
1000
MAX
+5.0
+5.0
700
-5
+85
+150
-
UNIT
V
V
mA
dBm
°C
°C
V
All pins, forward and reverse
voltage. Human body model.
No RF signal applied
Either PA powered separately
COMMENTS
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
DC Power Supply Voltage (V
CC
2G, V
CC
5G)
Power Control Voltage (PA
ON
2G, PA
ON
5G)
Case Temperature (T
C
)
MIN
2400
4900
+3.0
+2.0
0
-40
TYP
-
-
+3.3
+3.3
-
-
MAX
2500
5900
+4.4
+4.4
+0.8
+85
UNIT
MHz
V
V
°C
COMMENTS
802.11b/g
802.11a
with RF applied
PA "ON"
PA "SHUTDOWN"
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Data Sheet - Rev 2.1
09/2007
3
AWL6951
Table 4: Electrical Specifications - 2.4 GHz Continuous Wave
(T
C
= +25 °C, V
CC
2G = +3.3 V, PA
ON
2G = +3.3 V)
PARAMETER
P1dB
Shutdown Current
Quiescent Current
Harmonics
2f
O
3f
O
Input Return Loss
Output Return Loss
Reverse Isolation
Stability (Spurious)
T
ON
Setting Time
T
OFF
Setting Time
PA
ON
2G Pin Input
Impedance
MIN
24.5
-
-
TYP
27
33
64
MAX
-
100
80
UNIT
dBm
A
mA
PA
ON
2G = 0 V
PA
ON
2G = +2.0 V, V
CC
2G = +3.3 V
RF = off
P
OUT
2G = +23 dBm, f
O
= 2.45 GHz,
RBW = 1 MHz
COMMENTS
-
-
-
-
40
-
-
-
-
-36
-23
-14
-7
-
-
-
-
6.2
-27
-17
-10
-4
-
-60
1
1
-
dBm
dB
dB
dB
dBc
S
S
k
6:1 VSWR, at P
OUT
= +23 dBm, -5
O
C
Settles within
0.5
dB
Measured with +3.3 V applied to PA
ON
2G pin
4
Data Sheet - Rev 2.1
09/2007
AWL6951
Table 5: Electrical Specifications - 5 GHz Continuous Wave
(T
C
= +25 °C, V
CC
5G = +3.3 V, PA
ON
5G = +3.3 V)
PARAMETER
P1dB
Shutdown Current
Quiescent Current
Harmonics
2f
O
3f
O
Input Return Loss
Output Return Loss
Reverse Isolation
Stability (Spurious)
T
ON
Setting Time
T
OFF
Setting Time
PA
ON
5G Pin Input
Impedance
MIN
24
-
-
TYP
26.5
33
86
MAX
-
100
107
UNIT
dBm
A
mA
PA
ON
5G = 0 V
PA
ON
5G = +2.0 V, V
CC
5G = +3.3 V
RF = off
P
OUT
5G = +20 dBm, f
O
= 5.5 GHz,
RBW = 1 MHz
COMMENTS
-
-
-
-
40
-
-
-
-
-26
-42
-17
-14
-
-
-
-
6.2
-17
-33
-10
-10
-
-60
1
1
-
dBm
dB
dB
dB
dBc
S
S
k
6:1 VSWR, at P
OUT
= +22 dBm; -5
O
C
Settles within
0.5
dB
Measured with +3.3 V applied to PA
ON
5G pin
Data Sheet - Rev 2.1
09/2007
5
Embedded System
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