IS61LV10008
1M x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times:
8, 10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 36-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
ISSI
®
ADVANCED INFORMATION
MAY 2002
DESCRIPTION
The
ISSI
IS61LV10008 is a very high-speed, low power,
1M-word by 8-bit CMOS static RAM. The IS61LV10008 is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and
low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV10008 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV10008 is available in 48 ball mini BGA, 36-ball
mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
05/15/02
1
IS61LV10008
ISSI
WE CE OE
H
L
L
L
X
H
L
X
I/O Operation Vcc Current
High-Z
High-Z
D
OUT
D
IN
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
®
TRUTH TABLE
Mode
Not Selected
X
(Power-down)
Output Disabled H
Read
H
Write
L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
1.0
Unit
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V +10%, -5%
3.3V +10%, -5%
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
05/15/02
3
IS61LV10008
ISSI
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.0
–0.3
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
–1
–5
–1
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
1
5
1
5
V
V
V
V
µA
µA
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Unit
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
SB
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = f
MAX
.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
Com.
Ind.
-8
Min. Max.
—
—
—
—
—
—
—
—
230
240
70
80
50
55
40
45
-10
Min. Max.
—
—
—
—
—
—
—
—
220
230
60
70
50
55
40
45
-12
Min. Max.
—
—
—
—
—
—
—
—
210
220
50
60
50
55
40
45
Unit
mA
mA
I
SB
1
mA
I
SB
2
V
CC
= Max.,
Com.
CE
≥
V
CC
– 0.2V,
Ind.
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
mA
Note:
1.
At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
05/15/02
IS61LV10008
ISSI
-8
Min. Max.
8
—
3
—
—
—
0
—
3
—
0
0
0
—
—
8
—
8
3.5
3
—
3
—
3.5
3
—
—
8
-10
Min. Max.
10
—
3
—
—
—
0
0
3
—
0
0
0
—
—
10
—
10
4
4
—
4
—
4
3
—
—
10
-12
Min. Max.
12
—
3
—
—
—
0
0
3
—
0
0
0
—
—
12
—
12
5
5
—
6
—
5
4
—
—
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
LB, UB
Access Time
LB, UB
to High-Z Output
LB, UB
to Low-Z Output
Power Up Time
Power Down Time
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
BA
t
HZB
(2)
t
LZB
(2)
t
PU
t
PD
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of
1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-stat voltage.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
05/15/02
5
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