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KBPC2510(W)

Description
Bridge Rectifier Diode, 25A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size70KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

KBPC2510(W) Overview

Bridge Rectifier Diode, 25A, 1000V V(RRM),

KBPC2510(W) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current300 A
Number of components4
Maximum operating temperature125 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Base Number Matches1
BL
GALAXY ELECTRICAL
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to
300
Am peres peak
Ideal for printed circuit board
Reliable low cost construction utilizing m olded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 m ethod 208
KBPC25005(W) - - - KBPC2510(W)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
KBPC-W
.452
(11.5)
MAX
.042(1.1)
.090(2.0)
.591
(15.0)
MAX
1.181(30.0)
1.102(28.0)
HOLE FOR
NO.8 SCREW
AC
.732(18.6)
.692(17.6)
-
+
.468(11.9)
.429(10.9)
1.181(30.0)
1.102(28.0)
AC
.732(18.6)
.692(17.6)
.033x 250
(0.8x 6.4)
inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient tem perature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBPC KBPC KBPC KBPC KBPC KBPC KBPC
25005 2501 2502 2504 2506 2508 2510 UNITS
(W)
(W)
(W)
(W)
(W)
(W)
(W)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
25.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 12.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
300.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287041
BL
GALAXY ELECTRICAL
1.

KBPC2510(W) Related Products

KBPC2510(W) KBPC2506(W) KBPC2504(W) KBPC25005(W) KBPC2501(W) KBPC2508(W) KBPC2502(W)
Description Bridge Rectifier Diode, 25A, 1000V V(RRM), Bridge Rectifier Diode, 25A, 600V V(RRM), Bridge Rectifier Diode, 25A, 400V V(RRM), Bridge Rectifier Diode, 25A, 50V V(RRM), Bridge Rectifier Diode, 25A, 100V V(RRM), Bridge Rectifier Diode, 25A, 800V V(RRM), Bridge Rectifier Diode, 25A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A 300 A 300 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 25 A 25 A 25 A 25 A 25 A 25 A 25 A
Maximum repetitive peak reverse voltage 1000 V 600 V 400 V 50 V 100 V 800 V 200 V
surface mount NO NO NO NO NO NO NO
Base Number Matches 1 1 1 1 - - -

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