NDD04N60Z datasheet, PDF - EEWORLD Datasheet

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NDD04N60Z: Description3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size140KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NDD04N60Z Overview

3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

NDD04N60Z Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	600 V
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	isolation
Number of components	1
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	3 A
Rated avalanche energy	120 mJ
Maximum drain on-resistance	2 ohm
Maximum leakage current pulse	20 A

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NDF04N60Z, NDD04N60Z

N-Channel Power MOSFET

600 V, 2.0

Features

•

Low ON Resistance

Low Gate Charge

ESD Diode−Protected Gate

100% Avalanche Tested

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

www.onsemi.com

DSS

(@ T

Jmax

)

650 V

DS(on)

(MAX) @ 2 A

2.0

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Continuous Drain Current R

qJC

(Note 1)

Continuous Drain Current R

qJC

, T

100°C (Note 1)

Pulsed Drain Current,

@ 10V

Power Dissipation R

qJC

Gate−to−Source Voltage

Single Pulse Avalanche Energy, I

= 4.0

ESD (HBM) (JESD22−A114)

RMS Isolation Voltage

(t = 0.3 sec., R.H.

≤

30%, T

= 25°C)

(Figure 15)

Peak Diode Recovery (Note 2)

MOSFET dV/dt

Continuous Source Current

(Body Diode)

Maximum Temperature for Soldering

Leads

Operating Junction and

Storage Temperature Range

Symbol

DSS

esd

ISO

4.8

3.0

±30

120

3000

4500

−

NDF

NDD

600

4.1

2.6

Unit

G (1)

N−Channel

D (2)

S (3)

dV/dt

, T

stg

4.5

4.0

260

−55

to 150

V/ns

°C

NDF04N60ZG,

NDF04N60ZH

TO−220FP

CASE 221AH

1 2

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

2. I

= 4.0 A, di/dt

≤

100 A/ms, V

≤

DSS

, T

= +150°C

NDD04N60Z−1G

IPAK

CASE 369D

NDD04N60ZT4G

DPAK

CASE 369AA

ORDERING AND MARKING INFORMATION

See detailed ordering, marking and shipping information on

page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2015

May, 2017

−

Rev. 10

Publication Order Number:

NDF04N60Z/D

NDD04N60Z Related Products

	NDD04N60Z	NDD04N60ZG	NDF04N60Z	NDP04N60ZG	NDP04N60Z
Description	3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3	3	3
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-HOLE	THROUGH-hole
Terminal location	single	single	single	SINGLE	single
Shell connection	isolation	isolation	isolation	DRAIN	isolation
Number of components	1	1	1	1	1
Transistor component materials	silicon	silicon	silicon	SILICON	silicon
Minimum breakdown voltage	600 V	600 V	600 V	-	600 V
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3	HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3	HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3	-	HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
Lead-free	Yes	Yes	Yes	-	Yes
EU RoHS regulations	Yes	Yes	Yes	-	Yes
state	ACTIVE	ACTIVE	ACTIVE	-	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	-	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	-	Flange mounting
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin	-	MATTE Tin
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	-	Single WITH BUILT-IN diode
Channel type	N channel	N channel	N channel	-	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply	-	universal power supply
Maximum leakage current	3 A	3 A	3 A	-	3 A
Rated avalanche energy	120 mJ	120 mJ	120 mJ	-	120 mJ
Maximum drain on-resistance	2 ohm	2 ohm	2 ohm	-	2 ohm
Maximum leakage current pulse	20 A	20 A	20 A	-	20 A

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