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NDF04N60Z

Description
3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size140KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NDF04N60Z Overview

3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

NDF04N60Z Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current3 A
Rated avalanche energy120 mJ
Maximum drain on-resistance2 ohm
Maximum leakage current pulse20 A
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0
W
Features
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V
DSS
(@ T
Jmax
)
650 V
R
DS(on)
(MAX) @ 2 A
2.0
Ω
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Continuous Drain Current R
qJC
(Note 1)
Continuous Drain Current R
qJC
, T
A
=
100°C (Note 1)
Pulsed Drain Current,
V
GS
@ 10V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I
D
= 4.0
A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
30%, T
A
= 25°C)
(Figure 15)
Peak Diode Recovery (Note 2)
MOSFET dV/dt
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
4.8
3.0
20
30
±30
120
3000
4500
NDF
NDD
600
4.1
2.6
20
83
Unit
V
A
A
A
W
V
mJ
V
V
G (1)
N−Channel
D (2)
S (3)
dV/dt
dV/dt
I
S
T
L
T
J
, T
stg
4.5
60
4.0
260
−55
to 150
V/ns
V/ns
A
°C
°C
1
2
3
NDF04N60ZG,
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1
1 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
SD
= 4.0 A, di/dt
100 A/ms, V
DD
BV
DSS
, T
J
= +150°C
3
NDD04N60Z−1G
IPAK
CASE 369D
2
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
May, 2017
Rev. 10
1
Publication Order Number:
NDF04N60Z/D

NDF04N60Z Related Products

NDF04N60Z NDD04N60ZG NDD04N60Z NDP04N60ZG NDP04N60Z
Description 3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 3 3 3
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-HOLE THROUGH-hole
Terminal location single single single SINGLE single
Shell connection isolation isolation isolation DRAIN isolation
Number of components 1 1 1 1 1
Transistor component materials silicon silicon silicon SILICON silicon
Minimum breakdown voltage 600 V 600 V 600 V - 600 V
Processing package description HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3 HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3 HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3 - HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
Lead-free Yes Yes Yes - Yes
EU RoHS regulations Yes Yes Yes - Yes
state ACTIVE ACTIVE ACTIVE - ACTIVE
packaging shape Rectangle Rectangle Rectangle - Rectangle
Package Size Flange mounting Flange mounting Flange mounting - Flange mounting
terminal coating MATTE Tin MATTE Tin MATTE Tin - MATTE Tin
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode - Single WITH BUILT-IN diode
Channel type N channel N channel N channel - N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR - Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT - ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply - universal power supply
Maximum leakage current 3 A 3 A 3 A - 3 A
Rated avalanche energy 120 mJ 120 mJ 120 mJ - 120 mJ
Maximum drain on-resistance 2 ohm 2 ohm 2 ohm - 2 ohm
Maximum leakage current pulse 20 A 20 A 20 A - 20 A
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