NTD4904N datasheet, PDF - EEWORLD Datasheet

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NTD4904N: Description13 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size85KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD4904N Overview

13 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET

NTD4904N Parametric

Parameter Name	Attribute value
Minimum breakdown voltage	30 V
Number of terminals	3
Processing package description	LEAD FREE, CASE 369D-01, IPAK-3
state	Active
Rated avalanche energy	68.4 mJ
Shell connection	DRAIN
structure	SINGLE WITH BUILT-IN DIODE
Maximum leakage current	13 A
Maximum drain on-resistance	0.0055 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
jesd_30_code	R-PSIP-T3
jesd_609_code	e3
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
operating mode	ENHANCEMENT MODE
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	IN-LINE
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	N-CHANNEL
Maximum leakage current pulse	316 A
qualification_status	COMMERCIAL
surface mount	NO
terminal coating	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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NTD4904N

Power MOSFET

30 V, 79 A, Single N−Channel, DPAK/IPAK

Features

•

Low R

DS(on)

to Minimize Conduction Losses

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These are Pb−Free Devices

http://onsemi.com

(BR)DSS

30 V

DS(on)

MAX

3.7 mW @ 10 V

5.5 mW @ 4.5 V

MAX

79 A

Applications

•

CPU Power Delivery

•

DC−DC Converters

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (R

qJA

)

(Note 1)

Power Dissipation

qJA

) (Note 1)

Continuous Drain

Current (R

qJA

) (Note

Power Dissipation

qJA

) (Note 2)

Continuous Drain

Current (R

qJC

)

(Note 1)

Power Dissipation

qJC

) (Note 1)

Pulsed Drain Current

=10ms

Current Limited by Package

= 25°C

= 100°C

= 25°C

Steady

State

= 100°C

= 25°C

= 100°C

= 25°C

DmaxPkg

, T

stg

dV/dt

Symbol

DSS

Value

"20

17.8

12.6

2.6

9.2

1.4

316

−55 to

175

6.0

68.4

°C

V/ns

Unit

N−Channel

1 2

CASE 369AA

DPAK

(Bent Lead)

STYLE 2

2 3

CASE 369AD

CASE 369D

IPAK

(Straight Lead) (Straight Lead

DPAK)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

AYWW

04NG

Drain

AYWW

04NG

Drain

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (T

= 25°C, V

= 50 V, V

= 10 V,

L = 0.1 mH, I

L(pk)

= 37 A, R

= 25

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

1 2 3

Drain 3

Gate Drain Source

Gate Source

1 2 3

Gate Drain Source

4904N

= Assembly Location

= Year

= Work Week

= Device Code

= Pb−Free Package

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2014

June, 2014 − Rev. 2

Publication Order Number:

NTD4904N/D

AYWW

04NG

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