Datasheet
Voltage Detector (Reset) IC Series for Automotive Application
Free Time Delay Setting
CMOS Voltage Detector (Reset) IC
BD52xx-2C Series and BD53xx-2C Series
General Description
ROHM's BD52xx-2C and BD53xx-2C series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor controlled time delay. The lineup
includes N-channel open drain output (BD52xx-2C)
and CMOS output (BD53xx-2C) so that the users can
select depending on the application. The devices are
available for specific detection voltage ranging from
0.9V to 5.0V with 0.1V increment.
The time delay has ±50% accuracy in the overall
operating temperature range of -40°C to 125°C.
Key Specifications
Detection Voltage:
0.9V to 5.0V (Typ.)
0.1V step
Ultra-Low Current Consumption:
270nA (Typ.)
Time Delay Accuracy:
±50% (-40°C to +125°C, )
(CT pin capacitor ≥ 1nF)
Detection Voltage Accuracy:
±3%±12mV (V
DET
=0.9V to 1.6V)
±3% (V
DET
=1.7V to 5.0V)
Special Characteristics
Special Features
AEC-Q100 Qualified
(Note1)
Nano Energy
Delay Time Setting controlled by external capacitor
Two output types (Nch open drain and CMOS output)
Very small, lightweight and thin package
Package SSOP5 is similar to SOT-23-5 (JEDEC)
(Note1: Grade 1)
Package
SSOP5:
W(typ) x D(typ) x H(max)
2.90mm x 2.80mm x 1.25mm
Application
All automotive devices that requires voltage detection
Application Circuit
V
DD1
R
L
Microcontroller
BD52xx-2C
C
CT
RST
V
DD2
V
DD1
Microcontroller
BD53xx-2C
C
CT
RST
GND
GND
Figure 1. Open Drain Output Type
BD52xx-2C Series
Figure 2. CMOS Output Type
BD53xx-2C Series
Pin Configuration
SSOP5
TOP VIEW
CT
N.C.
Pin Description
SSOP5
PIN No.
1
2
3
4
5
Symbol
VOUT
VDD
GND
N.C.
CT
Function
Output pin
Power supply voltage
GND
No connection pin
Capacitor connection pin
for output delay time setting
Marking
VOUT VDD GND
Lot No.
N.C. pin is electrically open and can
be connected to either VDD or GND.
Nano Energy is a combination of technologies which realizes ultra low quiescent current operation.
○Product
structure：Silicon monolithic integrated circuit
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© 2016 ROHM Co., Ltd. All rights reserved.
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○This
product has no designed protection against radioactive rays
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05.Jul.2018 Rev.002
BD52xx-2C Series BD53xx-2C Series
Ordering Information
B
Part
Number
D
x
Output Type
x
x
x
x
Package
G : SSOP5
-
2
C
Product Rank
C : for Automotive
T
R
Detection Voltage
09 : 0.9V
0.1V step
50 : 5.0V
Packaging and forming
specification
TR : Embossed tape and reel
52 : Open Drain
53 : CMOS
Lineup
Output Type
Detection Voltage Marking
5.0V
1Z
4.9V
1Y
4.8V
1X
4.7V
1W
4.6V
1V
4.5V
1U
4.4V
1T
4.3V
1S
4.2V
1R
4.1V
1Q
4.0V
1P
3.9V
1N
3.8V
08
3.7V
07
3.6V
06
3.5V
05
3.4V
04
3.3V
03
3.2V
02
3.1V
01
3.0V
5G
2.9V
Z9
2.8V
Z8
2.7V
Z7
2.6V
XS
2.5V
XR
2.4V
24
2.3V
23
2.2V
22
2.1V
21
2.0V
20
1.9V
19
1.8V
18
1.7V
17
1.6V
16
1.5V
15
1.4V
14
1.3V
13
1.2V
12
1.1V
11
1.0V
10
0.9V
09
Open Drain
Part Number
BD5250
BD5249
BD5248
BD5247
BD5246
BD5245
BD5244
BD5243
BD5242
BD5241
BD5240
BD5239
BD5238
BD5237
BD5236
BD5235
BD5234
BD5233
BD5232
BD5231
BD5230
BD5229
BD5228
BD5227
BD5226
BD5225
BD5224
BD5223
BD5222
BD5221
BD5220
BD5219
BD5218
BD5217
BD5216
BD5215
BD5214
BD5213
BD5212
BD5211
BD5210
BD5209
Marking
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
5F
5E
CMOS
Part Number
BD5350
BD5349
BD5348
BD5347
BD5346
BD5345
BD5344
BD5343
BD5342
BD5341
BD5340
BD5339
BD5338
BD5337
BD5336
BD5335
BD5334
BD5333
BD5332
BD5331
BD5330
BD5329
BD5328
BD5327
BD5326
BD5325
BD5324
BD5323
BD5322
BD5321
BD5320
BD5319
BD5318
BD5317
BD5316
BD5315
BD5314
BD5313
BD5312
BD5311
BD5310
BD5309
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© 2016 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0R7R0G300200-1-2
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BD52xx-2C Series BD53xx-2C Series
Absolute Maximum Ratings (Ta=-40°C to +125°C)
Parameter
Power Supply Voltage
Output Voltage
Output Current
Operating Temperature Range
Junction Temperature Range
Storage Temperature Range
Nch Open Drain Output
CMOS Output
Symbol
V
DD
-GND
V
OUT
Io
Topr
Tj
Tstg
Limit
-0.3 to +7
GND-0.3 to +7
GND-0.3 to V
DD
+0.3
70
-40 to +125
-40 to +150
-55 to +150
Unit
V
V
mA
°C
°C
°C
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open
circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Thermal Resistance
(Note 1)
Parameter
SSOP5
Junction to Ambient
Junction to Top Characterization Parameter
(Note 2)
θ
JA
Ψ
JT
376.5
40
185.4
30
°C/W
°C/W
Symbol
Thermal Resistance (Typ)
1s
(Note 3)
2s2p
(Note
4)
Unit
(Note 1)Based
on JESD51-2A(Still-Air).
(Note 2)The
thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3)Using
a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Single
Top
Copper Pattern
Footprints and Traces
Layer Number of
Measurement Board
4 Layers
Top
Copper Pattern
Footprints and Traces
Material
FR-4
Board Size
114.3mm x 76.2mm x 1.57mmt
Thickness
70μm
(Note 4)Using
a PCB board based on JESD51-7.
Material
FR-4
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Bottom
Copper Pattern
74.2mm x 74.2mm
Thickness
70μm
35μm
Thickness
70μm
Copper Pattern
74.2mm x 74.2mm
Thickness
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TSZ02201-0R7R0G300200-1-2
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BD52xx-2C Series BD53xx-2C Series
Electrical Characteristics (Unless otherwise specified Ta=-40°C to +125°C, VDD=0.8V to 6V)
Parameter
Symbol
Condition
V
DET
=0.9V to 1.6V, V
DD
=HL, R
L
=100kΩ
Detection Voltage
V
DET
V
DET
=1.7V to 5.0V, V
DD
=HL, R
L
=100kΩ
Hysteresis Voltage
Circuit Current when ON
Circuit Current when OFF
Operating Voltage Range
“Low” Output Voltage (Nch)
∆V
DET
V
DD
=LHL, R
L
=100kΩ
I
DD1
I
DD2
V
OPL
V
OL
V
DD
= V
DET
-0.2V
V
DD
= V
DET
+0.5V
V
OL
≤0.4V, Ta=-40°C to 125°C, R
L
=100kΩ
V
DD
=0.8V, ISINK = 0.17mA, V
DET
=0.9V to 1.6V
V
DD
=1.2V, ISINK = 1.0mA, V
DET
=1.7V to 5.0V
V
DD
=2.4V, ISINK = 2.0mA, V
DET
=2.7V to 5.0V
V
DD
=4.8V, ISOURCE=2.0mA,
V
DET
(0.9V to 4.2V)
V
DD
=6.0V, ISOURCE=2.5mA,
V
DET
(0.9V to 5.0V)
V
DD
= V
DS
=6V
V
OUT
＝GND→50%,
CT=0.01μF
Note 1 Note 2
Min
V
DET
(T)
×0.97
-0.012
V
DET
(T)
×0.97
V
DET
×0.03
-
-
0.80
-
-
-
V
DD
-0.4
V
DD
-0.4
-
27.7
Limit
Typ
V
DET
(T)
V
DET
(T)
V
DET
×0.05
0.23
0.27
-
-
-
-
-
-
-
55.5
Max
V
DET
(T)
×1.03
+0.012
V
DET
(T)
×1.03
V
DET
×0.07
1.50
1.60
-
0.4
0.4
0.4
-
Unit
V
V
µA
µA
V
V
“High” Output Voltage (Pch)
V
OH
V
-
1.0
83.2
µA
ms
Output Leak Current (BD52xx)
Delay Time (L
→
H)
I
LEAK
t
PLH
V
DET
(T) : Standard Detection Voltage(0.9V to 5.0V, 0.1V step)
R
L
: Pull-up resistor to be connected between V
OUT
and power supply.
Note 1 t
PLH
: V
DD
=(V
DET
(T)–0.1V) → (V
DET
(T)+0.5V) for V
DET
=0.9V to 1.2V
t
PLH
: V
DD
=(V
DET
(T)–0.5V) → (V
DET
(T)+0.5V) for V
DET
=1.3V to 5.0V
Note 2 CT delay capacitor range: open to 4.7µF.
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TSZ02201-0R7R0G300200-1-2
05.Jul.2018 Rev.002
BD52xx-2C Series BD53xx-2C Series
Block Diagram
VDD
VOUT
Vref
*1
Delay
Delay
Circuit
*1
T
*1
GND
*1: Parasitic Diode
CT
Figure 3. BD52xx-2C Series
VDD
*1
Vref
*1
Delay
Delay
Circuit
Circuit
*1
*1
VOUT
GND
*1: Parasitic Diode
CT
Figure 4. BD53xx-2C Series
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© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/20
TSZ02201-0R7R0G300200-1-2
05.Jul.2018 Rev.002
Microcontroller MCU
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