KTA1271 datasheet, PDF - EEWORLD Datasheet

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KTA1271: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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KTA1271 Overview

Small Signal Bipolar Transistor

KTA1271 Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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KTA1271

Elektronische Bauelemente

-0.8A , -35V

PNP Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

High DC Current Gain

Complementary to KTC3203

TO-92

1

Emitter

2

Collector

3

Base

REF.

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

CLASSIFICATION OF h

FE (1)

Product-Rank

Range

KTA1271-O

100~200

KTA1271-Y

160~320

A

B

C

D

E

F

G

H

J

K

Collector

2

3

Base

1

Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θ

JA

T

J

, T

STG

Ratings

-35

-30

-5

-800

625

200

150, -55~150

Unit

V

mA

mW

° /W

C

°

C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE

f

T

C

ob

Min.

-35

-30

-5

-

100

35

-

Typ.

-

120

19

Max.

-

-0.1

-0.2

-0.1

320

-

-0.7

-0.8

-

Unit

V

µA

Test Conditions

I

C

= -0.1mA, I

E

=0

I

C

= -10mA, I

B

=0

I

E

= -0.1mA, I

C

=0

V

CB

= -35V, I

E

=0

V

CE

= -25V, I

B

=0

V

EB

= -5V, I

C

=0

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -700mA

I

C

= -500mA, I

B

= -20mA

V

CE

= -1V, I

C

= -10mA

V

CE

= -5V, I

C

= -10mA

V

CB

= -10V, I

E

=0, f=1MHz

V

MHz

pF

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

16-Nov-2012 Rev. A

Page 1 of 1

KTA1271 Related Products

	KTA1271	KTA1271-Y	KTA1271-Y-C	KTA1271-O	KTA1271-O-C	KTA1271-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	160	160	100	100	35
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
Base Number Matches	1	1	1	1	1	1
Maker	SECOS	-	-	SECOS	SECOS	SECOS

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