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KTA1271-C

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

KTA1271-C Overview

Small Signal Bipolar Transistor

KTA1271-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
KTA1271
Elektronische Bauelemente
-0.8A , -35V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain
Complementary to KTC3203
TO-92
1
Emitter
2
Collector
3
Base
REF.
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
KTA1271-O
100~200
KTA1271-Y
160~320
A
B
C
D
E
F
G
H
J
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
, T
STG
Ratings
-35
-30
-5
-800
625
200
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE
f
T
C
ob
Min.
-35
-30
-5
-
-
-
100
35
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
120
19
Max.
-
-
-
-0.1
-0.2
-0.1
320
-
-0.7
-0.8
-
-
Unit
V
V
V
µA
µA
µA
Test Conditions
I
C
= -0.1mA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -0.1mA, I
C
=0
V
CB
= -35V, I
E
=0
V
CE
= -25V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -700mA
I
C
= -500mA, I
B
= -20mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
V
V
MHz
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Nov-2012 Rev. A
Page 1 of 1

KTA1271-C Related Products

KTA1271-C KTA1271-Y KTA1271-Y-C KTA1271 KTA1271-O KTA1271-O-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 35 160 160 35 100 100
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1 1 1 1
Maker SECOS - - SECOS SECOS SECOS
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