SEMICONDUCTOR
TECHNICAL DATA
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
・Adoption
of FBET, MBIT Processes.
・High
Current Capacitance.
・Low
Collector-to-Emitter Saturation Voltage.
・High-Speed
Switching.
・Ultra
small Package Facilitates Miniaturization in end Products.
Q
A
C
KTC5706D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
H
F
1
2
F
3
P
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
P
C
Tc=25℃
T
j
T
stg
15
150
-55½150
℃
Q
1. BASE
SYMBOL
V
CBO
V
CES
RATING
80
80
UNIT
V
V
2. COLLECTOR
3. EMITTER
50
6
5
A
7.5
1.2
1.0
W
B
DPAK
V
EBO
I
C
I
CP
I
B
V
A
A
C
I
J
D
O
・High
Allowable Power Dissipation.
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_ 0.10
0.50 +
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
D
℃
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
0.1
1.0
+
0.90 MAX
K
1. BASE
2. COLLECTOR
3. EMITTER
E
IPAK
2006. 6. 22
Revision No : 1
1/4
KTC5706D/L
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V
(BR)CEO
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
V
CE(sat)2
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
V
BE(sat)
h
FE
f
T
C
ob
t
on
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
-
-
200
-
-
-
160
0.88
-
400
13
35
240
1.2
560
-
-
-
MHz
pF
mV
V
V
(BR)EBO
V
CE(sat)1
I
C
=1mA, I
B
=0
I
E
=10μ I
C
=0
A,
I
C
=1A, I
B
=50mA
50
6
-
-
-
90
-
-
135
V
V
mV
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10μ I
E
=0
A,
I
C
=100μ V
BE
=0
A,
MIN.
-
-
80
80
TYP.
-
-
-
-
MAX.
0.1
0.1
-
-
UNIT
μ
A
μ
A
V
V
Switching
Time
Storage Time
t
stg
-
300
-
nS
Fall Time
t
f
-
20
-
2006. 6. 22
Revision No : 1
2/4
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