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KTC5706D

Description
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size795KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

KTC5706D Overview

Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, DPAK-3

KTC5706D Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
SEMICONDUCTOR
TECHNICAL DATA
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
・Adoption
of FBET, MBIT Processes.
・High
Current Capacitance.
・Low
Collector-to-Emitter Saturation Voltage.
・High-Speed
Switching.
・Ultra
small Package Facilitates Miniaturization in end Products.
Q
A
C
KTC5706D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
H
F
1
2
F
3
P
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
P
C
Tc=25℃
T
j
T
stg
15
150
-55½150
Q
1. BASE
SYMBOL
V
CBO
V
CES
RATING
80
80
UNIT
V
V
2. COLLECTOR
3. EMITTER
50
6
5
A
7.5
1.2
1.0
W
B
DPAK
V
EBO
I
C
I
CP
I
B
V
A
A
C
I
J
D
O
・High
Allowable Power Dissipation.
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_ 0.10
0.50 +
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
D
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
0.1
1.0
+
0.90 MAX
K
1. BASE
2. COLLECTOR
3. EMITTER
E
IPAK
2006. 6. 22
Revision No : 1
1/4

KTC5706D Related Products

KTC5706D KTC5706L
Description Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, DPAK-3 Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, IPAK-3
Maker KEC KEC
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 200
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 400 MHz 400 MHz
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