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RD5.1SLN

Description
Zener Diode, 5.1V V(Z), 5.41%, 0.2W, Silicon, Unidirectional
CategoryDiscrete semiconductor    diode   
File Size56KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD5.1SLN Overview

Zener Diode, 5.1V V(Z), 5.41%, 0.2W, Silicon, Unidirectional

RD5.1SLN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage5.1 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.41%
Working test current0.5 mA
Base Number Matches1
DATA SHEET
ZENER DIODES
RD4.7SL to RD39SL
ZENER DIODES
200 mW 2 PIN SUPER MINI MOLD
DESCRIPTION
Type RD4.7SL to RD39SL Series are 2 PIN Super Mini
Mold Package zener diodes possessing an allowable power
dissipation of 200 mW featuring low noise and sharp break-
down characteristic. They are intended for use in audio
equipment, instrument equipment.
PACKAGE DIMENSIONS
(in millimeters)
2.5±0.15
1.7±0.1
FEATURES
• Low Noise
• Sharp Breakdown characteristic.
• Vz: Applied E24 standard.
0.19
0.11
+0.05
–0.01
Cathode
Indication
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform
0±0.05
Clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Power Dissipation
Forward Current
Reverse Surge Power
Junction Temperature
Storage Temperature
P
I
F
P
RSM
T
j
T
stg
200 mW
100 mA
2.2W (at t=10
µ
s/1 pulse) Show fig. 8
150
°C
–55 to +150
°C
Document No. D11445EJ2V0DS00 (2nd edition)
Date Published December 1998 N CP(K)
Printed in Japan
©
0.9±0.1
0.3±0.05
1.25±0.1
1996
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