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CY7C1383D-133AC

Description
Cache SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Categorystorage    storage   
File Size518KB,30 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

CY7C1383D-133AC Overview

Cache SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1383D-133AC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time6.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD (800)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm
Base Number Matches1
PRELIMINARY
CY7C1381D
CY7C1383D
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Features
Supports 133-MHz bus operations
512K X 36/1M X 18 common I/O
3.3V –5% and +10% core power supply (V
DD
)
2.5V or 3.3V I/O supply (V
DDQ
)
Fast clock-to-output times
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
— 8.5 ns (100-MHz version)
Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Offered in JEDEC-standard 100-pin TQFP ,119-ball BGA
and 165-ball fBGA packages
JTAG boundary scan for BGA and fBGA packages
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1381D/CY7C1383D is a 3.3V, 512K x 36 and 1M x
18 Synchronous Flowthrough SRAMs, respectively designed
to interface with high-speed microprocessors with minimum
glue logic. Maximum access delay from clock rise is 6.5 ns
(133-MHz version). A 2-bit on-chip counter captures the first
address in a burst and increments the address automatically
for the rest of the burst access. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
1
), depth-expansion Chip Enables (CE
2
and CE
3[2]
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
x
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
The CY7C1381D/CY7C1383D allows either interleaved or
linear burst sequences, selected by the MODE input pin. A
HIGH selects an interleaved burst sequence, while a LOW
selects a linear burst sequence. Burst accesses can be
initiated with the Processor Address Strobe (ADSP) or the
cache Controller Address Strobe (ADSC) inputs. Address
advancement is controlled by the Address Advancement
(ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1381D/CY7C1383D operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
133 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
6.5
210
70
117 MHz
7.5
190
70
100 MHz
8.5
175
70
Unit
ns
mA
mA
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3,
CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05544 Rev. **
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised August 12, 2004

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