Discontinued (9/98 - last order; 3/99 last ship)
IBM01174054M x 411/11, 5.0V, EDOMMDD64DSU-001012331. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405B4M x 411/11, 3.3V, EDOMMDD64DSU-001012331.
IBM0117405 IBM0117405M
IBM0117405B IBM0117405P
4M x 4 11/11 EDO DRAM
Features
• 4,194,304 word by 4 bit organization
• Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
• Standard Power (SP) and Low Power (LP)
• 2048 Refresh Cycles
- 32 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
• High Performance:
-50
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
t
RC
Column Address Access Time
Cycle Time
50
13
25
84
20
-60
60
15
30
104
25
Units
ns
ns
ns
ns
ns
• Low Power Dissipation
- Active (max) - 75 mA / 60 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
- 300µA (5.0 Volt)
• Extended Data Out (Hyper Page) Mode
• Read-Modify-Write
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
• Package: SOJ 26/24 (300mil x 675mil)
TSOP-26/24 (300mil x 675mil)
t
HPC
EDO (Hyper Page) Mode Cycle Time
Description
The IBM0117405 is a dynamic RAM organized
4,194,304 words by 4 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 22
addresses required to access any bit of data are
multiplexed (11 are strobed with RAS, 11 are
strobed with CAS).
Pin Assignments
(Top View)
Vcc
I/O0
I/O1
WE
RAS
NC
Pin Description
RAS
Row Address Strobe
Column Address Strobe
Read/Write Input
Address Inputs
Output Enable
Data Input/Output
Power (+3.3V or +5.0V)
Ground
CAS
WE
A0 - A10
OE
I/O0 - I/O3
V
CC
V
SS
1
2
3
4
5
6
26
25
24
23
22
21
Vss
I/O3
I/O2
CAS
OE
A9
A10
A0
A1
A2
A3
Vcc
8
9
10
11
12
13
19
18
17
16
15
14
A8
A7
A6
A5
A4
Vss
28H4726
SA14-4228-05
Revised 4/97
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 31
Discontinued (9/98 - last order; 3/99 last ship)
IBM0117405 IBM0117405M
IBM0117405B IBM0117405P
4M x 4 11/11 EDO DRAM
Absolute Maximum Ratings
Rating
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
Parameter
3.3 Volt Device
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
-0.5 to +4.6
-0.5 to min (V
CC
+0.5, 4.6)
-0.5 to min (V
CC
+0.5, 4.6)
0 to +70
-55 to +150
1.0
50
5.0 Volt Device
-1.0 to +7.0
-0.5 to min (V
CC
+0.5, 7.0)
-0.5 to min (V
CC
+0.5, 7.0)
0 to +70
-55 to +150
1.0
50
V
V
V
°C
°C
W
mA
1
1
1
1
1
1
1
Units
Notes
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
3.3 Volt Device
Symbol
V
CC
V
IH
V
IL
Parameter
Min.
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.5
Typ.
3.3
—
—
(T
A
= 0 to 70˚C)
5.0 Volt Device
Units
Notes
1
1, 2
1, 2
Max.
3.6
V
CC
+ 0.5
0.8
Min.
4.5
2.4
-0.5
Typ.
5.0
—
—
Max.
5.5
V
CC
+ 0.5
0.8
V
V
V
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns with 3.3 Volt, or V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V
for
≤
8.0ns) with 5.0 Volt. Additionally, V
IL
may undershoot to -2.0V for pulse widths
≤
4.0ns with 3.3 Volt, or to -2.0V for pulse
widths
≤
4.0ns (or -1.0V for
≤
8.0ns) with 5.0 Volt. Pulse widths measured at 50% points with amplitude measured peak to DC ref-
erence.
Capacitance
(T
A
= 25°C, V
CC
= 3.3V
±
0.3V or V
CC
= 5.0V
±
0.5V)
Symbol
C
I1
C
I2
C
O
Parameter
Input Capacitance (A0 - A11)
Input Capacitance (RAS, CAS, WE, OE)
Output Capacitance (I/O0 - I/O3)
Min.
—
—
—
Max.
5
7
7
Units
pF
pF
pF
Notes
1
1
1
1. Input capacitance measurements made with rise time shift method with CAS & RAS = V
IH
to disable output.
28H4726
SA14-4228-05
Revised 4/97
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 31
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