April 1999
FDC6321C
Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
digital transistors in load switching applications. Since bias
resistors are not required this dual digital FET can replace
several digital transistors with different bias resistors.
Features
N-Ch 25 V, 0.68 A, R
DS(ON)
= 0.45
Ω
@ V
GS
= 4.5 V
P-Ch -25 V, -0.46 A, R
DS(ON)
= 1.1
Ω
@ V
GS
= -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V
GS(th)
< 1.0V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple dual NPN & PNP digital transistors.
SOT-23
SuperSOT
TM
-6
Mark:.321
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
S1
D1
4
3
G2
5
2
SuperSOT
TM
-6
S2
G1
6
1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
N-Channel
P-Channel
Units
V
DSS
, V
CC
V
GSS
, V
IN
I
D
, I
O
P
D
T
J
,T
STG
ESD
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
Drain/Output Current
- Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
25
8
0.68
2
0.9
0.7
-55 to 150
6
-25
-8
-0.46
-1.5
V
V
A
W
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
°C
kV
THERMAL CHARACTERISTICS
R
θJA
R
θJC
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC6321C.RevB
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Type
N-Ch
P-Ch
o
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
I
D
= 250 µA, Referenced to 25 C
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V,
T
J
= 55°C
V
DS
=-20 V, V
GS
= 0 V,
T
J
= 55°C
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
25
-25
26
-22
1
10
V
mV /
o
C
µA
∆
BV
DSS
/
∆
T
J
I
DSS
I
DSS
I
GSS
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
N-Ch
P-Ch
N-Ch
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
P-Ch
N-Ch
P-Ch
-1
-10
100
-100
µA
nA
nA
mV /
o
C
ON CHARACTERISTICS
(Note 2)
∆
V
GS(th)
/
∆
T
J
V
GS(th)
R
DS(ON)
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
I
D
= 250 µA, Referenced to 25
o
C
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= 4.5 V, I
D
= 0.5 A
T
J
=125°C
V
GS
= 2.7 V, I
D
= 0.25A
V
GS
= -4.5 V, I
D
= -0.5 A
T
J
=125°C
V
GS
= -2.7 V, I
D
= -0.25 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
0.65
-0.65
-2.6
2.1
0.8
-0.86
0.33
0.51
0.44
1.5
-1.5
0.45
0.72
0.6
1.1
1.8
1.5
V
Static Drain-Source On-Resistance
Ω
P-Ch
0.87
1.21
1.22
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 0.5 A
V
DS
= -5 V, I
D
= -0.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
1.45
0.8
50
63
28
34
9
10
A
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -10 V, V
GS
= 0V,
f = 1.0 MHz
pF
pF
pF
FDC6321C.RevB
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
N-Ch
P-Ch
N-Ch
P-Ch
Min
Typ
Max
Units
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
Turn - On Rise Time
N-Channel
V
DD
= 6 V, I
D
= 0.5 A,
V
Gs
= 4.5 V, R
GEN
= 50
Ω
P-Channel
V
DD
= -6 V, I
D
= -0.5 A,
V
Gen
= -4.5 V, R
GEN
= 50
Ω
N-Channel
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
P- Channel
V
DS
= -5 V,
I
D
= -0.25 A, V
GS
= -4.5 V
3
7
8
9
17
55
13
35
1.64
1.1
0.38
0.32
0.45
0.25
6
20
16
18
30
110
25
70
2.3
1.5
nS
nS
Turn - Off Delay Time
Turn - Off Fall Time
N-Ch
P-Ch
N-Ch
P-Ch
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
T
J
=125°C
P-Ch
T
J
=125°C
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
V
GS
= 0 V, I
S
= -0.5 A
0.3
-0.5
0.83
0.69
-0.89
-0.75
1.2
0.85
-1.2
-0.85
A
V
(Note)
(Note)
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
a. 140
O
C/W on a 0.125 in
2
pad of
2oz copper.
b. 180
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
FDC6321C.RevB
Typical Electrical Characteristics: N-Channel
1.5
I
D
, DRAIN-SOURCE CURRENT (A)
1.2
3.5
3.0
2.7
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
2
2.5
2.0
V
GS
= 2.0V
1.5
0.9
2.5
2.7
3.0
3.5
4.5
0.6
1
0.3
1.5
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
0.2
0.4
0.6
0.8
1
1.2
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
2
I
D
=0.5 A
1.4
R
DS(on)
, ON-RESISTANCE (OHM)
ID= 0.5A
1.6
V
GS
= 4.5 V
1.2
1.2
1
0.8
125°C
0.4
0.8
25°C
0.6
-50
0
-25
0
25
50
75
100
125
150
1
1.5
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
1
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
0.8
T
J
= -55°C
25°C
125°C
1
V
GS
= 0V
0.1
T = 125°C
J
25°C
0.6
0.4
0.01
-55°C
0.2
0.001
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6321C.RevB
Typical Electrical Characteristics: N-Channel
(continued)
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 0.5A
V
DS
= 5V
10V
CAPACITANCE (pF)
150
100
4
15V
50
Ciss
Coss
3
2
20
1
10
f = 1 MHz
V
GS
= 0V
C rss
0
0
0.4
0.8
1.2
1.6
2
Q
g
, GATE CHARGE (nC)
5
0.1
V
DS
0.5
1
2
5
10
25
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
5
I
D
, DRAIN CURRENT (A)
1
POWER (W)
N)
(O
DS
R
IT
LIM
10
1m
0µs
s
10
ms
4
SINGLE PULSE
R
θ
JA
=See note 1b
T = 25°C
A
0.3
0.1
DC
1s
10
0m
s
3
2
0.03
0.01
0.1
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= See note 1b
T
A
= 25°C
0.2
0.5
1
2
5
10
20
40
1
0
0.01
0.1
1
10
100
300
V
DS
, DRAI N-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
FDC6321C.RevB
Power technology
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