March 1999
FDC6324L
Integrated Load Switch
General Description
These Integrated Load Switches are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance. These
devices are particularly suited for low voltage high side load
switch application where low conduction loss and ease of driving
are needed.
Features
V
DROP
=0.2V @ V
IN
=12V, I
L
=1A, V
ON/OFF
=1.5 to 8V
V
DROP
=0.3V @ V
IN
=5V, I
L
=1A, V
ON/OFF
=1.5 to 8V.
High density cell design for extremely low on-resistance.
V
ON/OFF
Zener protection for ESD ruggedness.
Body Model.
TM
>6KV Human
SuperSOT -6 package design using copper lead frame for superior
thermal and electrical capabilities.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
Vin,R1
4
Q2
3
EQUIVALENT CIRCUIT
Vout,C1
ON/OFF
5
Q1
2
IN
Vout,C1
+
V
D R O P
-
OUT
ON/OFF
R1,C1
6
1
R2
pin
1
SuperSOT
TM
-6
See Application Circuit
Absolute Operating Range
Symbol
V
IN
V
ON/OFF
I
L
T
A
= 25°C unless otherwise noted
Parameter
Input Voltage Range
ON/OFF Voltage Range
Load Current @ V
DROP
=0.5V - Continuous
- Pulsed
(Note 1)
(Note 1 & 3)
(Note 2a)
FDC6324L
3 - 20
1.5 - 8
1.5
2.5
0.7
-55 to 150
6
Units
V
V
A
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
W
°C
kV
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2a)
(Note 2)
180
60
°C/W
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC6324L Rev. D
Electrical Characteristics
(T
Symbol
Parameter
OFF CHARACTERISTICS
I
FL
I
RL
Forward Leakage Current
Reverse Leakage Current
(Note 3)
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
V
IN
= 20 V, V
ON/OFF
= 0 V
V
IN
= -20 V, V
ON/OFF
= 0 V
1
-1
µA
µA
ON CHARACTERISTICS
V
IN
V
ON/OFF
V
DROP
Input Voltage
3
1.5
V
IN
= 10 V, V
ON/OFF
= 3.3V
V
IN
= 5 V, V
ON/OFF
= 3.3 V
0.135
0.215
1
1
20
8
0.2
0.3
V
V
V
On/Off Voltage
Conduction Voltage Drop @ 1A
I
L
Load Current
V
DROP
= 0.2 V, V
IN
= 10 V, V
ON/OFF
= 3.3 V
V
DROP
= 0.3 V, V
IN
= 5 V, V
ON/OFF
= 3.3 V
A
Notes:
1. V
IN
=20V, V
ON/OFF
=8V, V
DROP
=0.5V, T
A
=25
o
C
2. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
P
D
(
t
)
=
T
J
−T
A
R
θ
J A
(t)
=
T
J
−T
A
R
θ
J C
θ
CA
+R (t)
=
I
2
(
t
) ×
R
DS(ON)@
T
D
J
Typical R
θ
JA
for single device operation using the board layouts shown below on FR-4 PCB in astill air environment:
a. 180
o
C/W when mounted on a 2oz minimum copper pad.
2a
Scale 1 : 1 on letter size paper
3. Pulse Test: Pulse Width < 300µs, Duty Cycle< 2.0%
FDC6324L Rev. D
Typical Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
0.5
TJ = 125°C
P
0.5
TJ = 125°C
V
D R O
, (V)
P
TJ = 25°C
,
R
(V)
O
0.4
0.4
TJ = 25°C
0.3
0.3
V
D
0.2
V
IN
= 12V
V
ON/OFF
= 1.5 - 8V
PW =300us, D
≤
2%
0.2
V
IN
= 5V
V
ON/OFF
= 1.5 - 8V
PW =300us, D
≤
2%
0.1
0.1
0
0
0
1
2
I
L
,(A)
3
4
0
1
2
I
L
(A)
3
4
Figure 1. V
DROP
Versus I
L
at V
IN
=12V.
Figure 2. V
DROP
Versus I
L
at V
IN
=5.0V.
1
I = 1A
L
VON/OFF = 1.5 - 8V
PW =300us, D
≤
2 %
0.45
I L = 1A
VIN = 5V
PW =300us, D
≤
2 %
0.8
0.4
R
DS(ON), (Ohm
)
0.35
TJ = 125°C
V
DROP
(V)
0.6
0.3
0.25
0.4
T J = 125°C
0.2
TJ = 25°C
TJ = 25°C
0.2
0.15
0
1
2
I
L
, (A)
3
4
5
0
1
2
V
3
IN
4
(V)
5
Figure 3. V
DROP
Versus V
IN
at I
L
=1A.
Figure 4. R
(ON)
Versus I
L
at V
IN
=5.0V.
1
I L = 1A
V
ON/OFF
= 1.5 - 8V
PW =300us, D
≤
2 %
0.8
R
(ON)
,(Ohm)
0.6
0.4
TJ = 125°C
0.2
TJ = 25°C
0
1
2
3
V
IN
, (V)
4
5
Figure 5. On Resistance Variation with
Input Voltage.
FDC6324L Rev.D
Typical Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
500
500
Vin = 5V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
400
Vin = 12V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
td(off)
Time (us)
400
Time (us)
300
300
200
tf
200
td(off)
tf
100
100
tr
tr
0
0
20
40
60
R2 (KOhm)
80
td(on)
100
td(on)
100
0
0
20
40
60
R2 (KOhm)
80
Figure 6. Switching Variation with R2 at
Vin=12V and R1=300KOhm
.
Figure 7. Switching Variation with R2 at
Vin=5V and R1=300KOhm.
500
% of Current Overshoot
400
Time (us)
300
Vin = 3.3V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
120
100
80
60
40
20
Vin = 12V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
tr
200
5V
3.3V
100
td(on)
tf
td(off)
0
20
40
60
R2 (KOhm)
80
100
0
0
0
20
40
60
R2 (KOhm)
80
100
Figure 8. Switching Variation with R2 at
Vin=3.3V and R1=300KOhm.
Figure 9. % of Current Overshoot Variation
with Vin and R2 .
2,000
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
t
on
t
d(on)
Vin = 3.3V
t
off
t
r
90%
t
d(off)
90%
t
f
1,600
Vdrop (mV)
1,200
V
O U T
800
10%
10%
INVERTED
400
5V
12V
90%
V
IN
100
10%
50%
50%
0
0
20
40
60
R2 (KOhm)
80
PULSE WIDTH
Figure 10. Vdrop Variation with Vin and R2 .
Figure 11. Switching Waveforms.
FDC6324L Rev. D
Typical Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
10
3
1
0.3
0.1
0.03
0.01
0.1
IT
LIM
N)
(O
R
10
0u
s
1m
10
s
ms
I
L
, DRAIN CURRENT (A)
10
0m
s
1s
V
IN
= 12V
SINGLE PULSE
R
θ
JA
= See Note 2a
T
A
= 25°C
0.2
0.5
1
2
V
DROP
(V)
DC
5
10
20
30
Figure 12. Safe Operating Area
.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= See Note 2a
t
1
t
2
T
J
- T
A
= P * R
θ
JA(t)
Duty Cycle, D = t
1
/ t
2
Figure 13. Transient Thermal Response Curve.
Note: Thermal characterization performed on the conditions described in Note
2a. Transient thermal response will change depends on the circuit board
FDC6324L Rev. D
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