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BF770AE6433

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BF770AE6433 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN

BF770AE6433 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1

BF770AE6433 Related Products

BF770AE6433
Description RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
Maker Infineon
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 0.05 A
Collector-based maximum capacity 0.9 pF
Collector-emitter maximum voltage 12 V
Configuration SINGLE
JESD-30 code R-PDSO-G3
JESD-609 code e3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 6000 MHz
Base Number Matches 1
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