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IRHM7254SE

Description
Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size88KB,2 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHM7254SE Overview

Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

IRHM7254SE Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRHM7254SE Related Products

IRHM7254SE IRHM7254SEPBF IRHN7254SE IRHN7254SEPBF
Description Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it lead-free? Contains lead Lead free Contains lead Lead free
Is it Rohs certified? incompatible conform to incompatible conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 250 V 250 V 250 V 250 V
Maximum drain current (ID) 23 A 23 A 23 A 23 A
Maximum drain-source on-resistance 0.12 Ω 0.12 Ω 0.12 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-MSFM-P3 S-MSFM-P3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W 150 W 150 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES
Terminal form PIN/PEG PIN/PEG NO LEAD NO LEAD
Terminal location SINGLE SINGLE BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 40 NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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