Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-254AA |
| package instruction | FLANGE MOUNT, S-MSFM-P3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 250 V |
| Maximum drain current (ID) | 23 A |
| Maximum drain-source on-resistance | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | S-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 150 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRHM7254SEPBF | IRHM7254SE | IRHN7254SE | IRHN7254SEPBF | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Is it lead-free? | Lead free | Contains lead | Contains lead | Lead free |
| Is it Rohs certified? | conform to | incompatible | incompatible | conform to |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 250 V | 250 V | 250 V | 250 V |
| Maximum drain current (ID) | 23 A | 23 A | 23 A | 23 A |
| Maximum drain-source on-resistance | 0.12 Ω | 0.12 Ω | 0.12 Ω | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-MSFM-P3 | S-MSFM-P3 | R-CBCC-N3 | R-CBCC-N3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE | SQUARE | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | CHIP CARRIER | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 150 W | 150 W | 150 W | 150 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES | YES |
| Terminal form | PIN/PEG | PIN/PEG | NO LEAD | NO LEAD |
| Terminal location | SINGLE | SINGLE | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 40 | NOT SPECIFIED | NOT SPECIFIED | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
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