INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC2624
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·High
Reliability
APPLICATIONS
·Switching
regulators
·Ultrasonic
generators
·High
frequency inverters
·General
purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
450
UNIT
V
400
400
7
V
V
V
5
A
1.5
80
150
-55~150
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2624
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA ; I
B
= 0
400
V
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 1A ; I
B
= 0
400
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA ; I
E
= 0
450
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1mA ; I
C
= 0
I
C
= 2A; I
B
= 0.4A
B
7
V
V
CE
(sat)
V
BE
(sat)
I
CBO
Collector-Emitter Saturation Voltage
1.2
V
Base-Emitter Saturation Voltage
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
Switching times
t
on
t
stg
t
f
Turn-on Time
w
.cn
i
em
cs
.is
w
w
I
C
= 2A; I
B
= 0.4A
B
1.5
V
V
CB
= 450V ; I
E
=0
1.0
mA
V
EB
= 7V; I
C
=0
0.1
mA
I
C
= 5A; V
CE
= 5V
10
1.0
I
C
= 4A , I
B1
= -I
B2
= 0.8A
R
L
= 20Ω;P
W
=20μs
Duty Cycle≤2%
μs
μs
μs
Storage Time
2.0
Fall Time
1.0
isc Website：www.iscsemi.cn
2
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