TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 2000, Power Innovations Limited, UK
MARCH 1994 - REVISED MARCH 2000
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
G
Patented Ion-Implanted Breakdown Region
– Precise DC and Dynamic Voltages
DEVICE
‘7072F3
‘7082F3
V
DRM
V
58
66
V
(BO)
V
72
82
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
MDXXAL
G
G
Planar Passivated Junctions
– Low Off-State Current ....................< 10 µA
Rated for International Surge Wave Shapes
– Single and Simultaneous Impulses
WAVE SHAPE
2/10
8/20
10/160
10/700
10/560
10/1000
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
85
80
65
50
45
40
P PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
MDXXAJA
NC - No internal connection
NU - Nonusable; no external electrical connection
should be made to these pins.
Specified ratings require connection of pin 5 and
pin 8.
SL PACKAGE
(TOP VIEW)
G
..................UL Recognized Component
T
G
R
1
2
3
MDXXAGA
MD7XAACA
description
The TISP7xxxF3 series are 3-point overvoltage
protectors designed for protecting against
metallic (differential mode) and simultaneous
longitudinal (common mode) surges. Each
terminal pair has the same voltage limiting
values and surge current capability. This terminal
pair surge capability ensures that the protector
can meet the simultaneous longitudinal surge
requirement which is typically twice the metallic
surge requirement.
Each terminal pair has a symmetrical voltage-
triggered thyristor characteristic. Overvoltages
are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which
causes the device to crowbar into a low-voltage
on state. This low-voltage on state causes the
current resulting from the overvoltage to be .
AVAILABLE OPTIONS
DEVICE
TISP7xxxF3
TISP7xxxF3
TISP7xxxF3
PACKAGE
D, Small-outline
P, Plastic DIP
SL, Single-in-line
CARRIER
device symbol
T
R
SD7XAB
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
ORDER #
TISP7xxxF3DR
TISP7xxxF3D
TISP7xxxF3P
TISP7xxxF3SL
TAPE AND REEL
TUBE
TUBE
TUBE
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
description (continued)
safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted
current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in
both polarities.
These low voltage devices are guaranteed to suppress and withstand the listed international lightning surges
on any terminal pair. Nine similar devices with working voltages from 100 V to 275 V are detailed in the
TISP7125F3 thru TISP7380F3 data sheet.
absolute maximum ratings, T
A
= 25 °C (unless otherwise noted)
RATING
Repetitive peak off-state voltage, 0 °C < T
A
< 70 °C
‘7072F3
‘7082F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 °C < T
A
< 70 °C (see Notes 1 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
I
TSM
4.3
5.7
7.1
250
-65 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
240
85
45
80
65
60
50
50
50
45
40
A
V
DRM
58
66
V
SYMBOL
VALUE
UNIT
NOTES: 1. Initially the TISP
®
must be in thermal equilibrium at the specified T
A
. The surge may be repeated after the TISP
®
returns to its
initial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T to R terminals.
Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal
current will be twice the above rated current values).
2. See Thermal Information for derated I
PPSM
values 0 °C < T
A
< 70 °C and Applications Information for details on wave shapes.
3. Above 70 °C, derate I
TSM
linearly to zero at 150 °C lead temperature.
PRODUCT
INFORMATION
2
TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
electrical characteristics for all terminal pairs, T
A
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
V
(BO)
Repetitive peak off-
state current
Breakover voltage
TEST CONDITIONS
V
D
= V
DRM
, 0 °C < T
A
< 70 °C
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I
(BO)
V
T
I
H
dv/dt
I
D
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
C
off
Off-state capacitance
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
(see Note 4)
NOTE
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First five capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
V
d
= 1 V rms, V
D
= 0
V
d
= 1 V rms, V
D
= -1 V
V
d
= 1 V rms, V
D
= -2 V
V
d
= 1 V rms, V
D
= -5 V
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
DTR
= 0
53
56
51
43
25
29
±0.15
±5
±10
69
73
66
56
33
37
pF
±0.1
±0.8
±5
A
V
A
kV/µs
µA
‘7072F3
‘7082F3
±90
±100
V
‘7072F3
‘7082F3
MIN
TYP
MAX
±10
±72
±82
UNIT
µA
V
PRODUCT
INFORMATION
3
TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
thermal characteristics
PARAMETER
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C
5 cm
2
, FR4 PCB
D Package
P Package
SL Package
MIN
TYP
MAX
160
100
135
°C/W
UNIT
R
θJA
Junction to free air thermal resistance
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
T and G and R and G measurements are referenced to the G terminal
T and R measurements are referenced to the R terminal
PRODUCT
INFORMATION
4
TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
R and G, or T and G terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC7LAC
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7LAE
Normalised Breakdown Voltages
1.2
10
I
D
- Off-State Current - µA
1
1.1
V
(BO)
V
(BR)M
1.0
V
(BR)
Normalised to V
(BR)
I
(BR)
= 1 mA and 25°C
Positive Polarity
0·1
V
D
= -50 V
V
D
= 50 V
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7LAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
Positive Polarity
TC7LAL
Normalised Breakdown Voltages
1.2
1.1
V
(BO)
I
T
- On-State Current - A
Normalised to V
(BR)
I
(BR)
= 1 mA and 25°C
Negative Polarity
10
1.0
V
(BR)
V
(BR)M
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
150°C
25°C
-40°C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
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