INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDW93/A/B/C
DESCRIPTION
·Collector
Current -I
C
=
12A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDW93; 60V(Min)- BDW93A
80V(Min)- BDW93B; 100V(Min)- BDW93C
·Complement
to Type BDW94/A/B/C
APPLICATIONS
·Designed
for hammer drivers, audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW93
VALUE
45
UNIT
V
CBO
Collector-Base
Voltage
V
CEO
Collector-Emitter
Voltage
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BDW93A
BDW93B
60
80
V
BDW93C
100
45
BDW93
BDW93A
BDW93B
60
80
V
BDW93C
100
5
12
15
0.2
80
150
-65~150
V
A
A
A
W
℃
℃
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.5
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW93
BDW93A
I
C
= 100mA; I
B
= 0
BDW93B
BDW93C
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)-1
V
BE(sat)-1
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 20mA
B
BDW93/A/B/C
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
80
100
2.0
3.0
2.5
4.0
V
V
V
V
I
C
= 10A; I
B
= 0.1A
I
C
= 5A; I
B
= 20mA
B
I
CBO
Collector
Cutoff Current
I
CEO
Collector
Cutoff Current
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I
C
= 10A; I
B
= 0.1A
V
CB
= 45V; I
E
= 0
V
CB
= 60V; I
E
= 0
V
CB
= 80V; I
E
= 0
BDW93
BDW93A
BDW93B
BDW93C
V
CB
= 100V; I
E
= 0
B
0.1
mA
BDW93
V
CE
= 45V; I
B
= 0
V
CE
= 60V; I
B
= 0
B
BDW93A
BDW93B
1.0
V
CE
= 80V; I
B
= 0
B
mA
BDW93C
I
EBO
h
FE-1
h
FE-2
h
FE-3
V
ECF-1
V
ECF-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
C-E Diode Forward Voltage
C-E Diode Forward Voltage
V
CE
= 100V; I
B
= 0
V
EB
= 5V; I
C
= 0
I
C
= 3A; V
CE
= 3V
I
C
= 5A; V
CE
= 3V
I
C
= 10A; V
CE
= 3V
I
F
= 5A
I
F
= 10A
1000
750
100
2.0
4.0
V
V
20000
2.0
mA
isc Website:www.iscsemi.cn
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