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BU4508DZ

Description
Silicon NPN Power Transistor
File Size203KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BU4508DZ Overview

Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU4508DZ
DESCRIPTION
·High
Voltage-
·High
Switching Speed
·Built-in
Damer Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
7.5
8
UNIT
V
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
w
.cn
i
em
cs
.is
w
w
V
V
A
15
4
A
A
6
32
150
-65~150
A
W
I
BM
P
C
T
J
T
stg
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
4.0
UNIT
℃/W
R
th j-c
isc Website:www.iscsemi.cn
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