INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU505D
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V(Min.)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage-V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
700
5
UNIT
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
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w
w
V
V
2.5
4
A
A
2
A
4
75
150
-65~150
A
W
℃
℃
I
BM
P
C
T
J
T
stg
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU505D
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
700
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.9A
B
1.0
V
V
BE(
sat
)
I
CES
Base-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.9A
B
1.3
0.15
1.0
1.0
V
Collector Cutoff Current
V
CE
= V
CESmax
; V
BE
= 0
V
CE
= V
CESmax
; V
BE
= 0;T
J
= 125℃
V
EB
= 5V; I
C
= 0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
f
T
Current-Gain—Bandwidth Product
V
ECF
C-E Diode Forward Voltage
C
OB
Output Capacitance
Switching Times; Resistive load
t
stg
Storage Time
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w
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I
C
= 0.1A; V
CE
= 5V
6
I
C
= 0.1A; V
CE
= 5V
I
F
= 2A
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
I
C
= 2A , I
B(
end
)
= 0.9A;V
dr
= -4V
L
B
= 25μH
30
7
MHz
1.8
V
65
pF
9.5
μs
t
f
Fall Time
0.85
μs
isc Website：www.iscsemi.cn
2
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