EEWORLDEEWORLDEEWORLD

Part Number

Search

SS16LMH

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size199KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SS16LMH Overview

Rectifier Diode

SS16LMH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperature30
Base Number Matches1
SS12L thru SS115L
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
Maximum reverse current @ rated VR T
J
=25
T
J
=100
T
J
=125
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SYMBOL
SS
12L
12L
20
14
20
SS
13L
13L
30
21
30
SS
14L
14L
40
28
40
SS
15L
15L
50
35
50
1
30
SS
16L
16L
60
42
60
SS
19L
19L
90
63
90
SS
10L
100
70
100
SS
A5L
150
105
150
V
V
V
A
A
110L 115L
UNIT
V
F
0.385
0.45
0.43
0.50
0.51
0.55
0.4
0.58
0.70
0.70
0.80
0.05
0.75
0.90
V
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
8.0
-
6.0
10000
45
100
- 55 to +125
- 55 to +150
- 55 to +150
-
0.5
mA
V/μs
O
C/W
O
O
C
C
Document Number: DS_D1308028
Version: N13

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2082  1997  1869  2822  480  42  41  38  57  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号