TT285N12 datasheet, PDF - EEWORLD Datasheet

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TT285N12: DescriptionTrigger Device,; CategoryAnalog mixed-signal IC Trigger device; File Size67KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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TT285N12 Overview

Trigger Device,

TT285N12 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Base Number Matches	1

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Technische Information / Technical Information

Netz-Thyristor-Modul

Phase Control Thyristor Module

TT 285 N 12...16

= - 40°C...T

vj max

= - 40°C...T

vj max

= + 25°C...T

vj max

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse currents

Zündverzug

gate controlled delay time

Freiwerdezeit

circuit commutated turn-off time

= T

vj max

, i

= 800A

= T

vj max

= T

vj max

= 25°C, v

= 6V

= 25°C, v

= 6V

= T

vj max

, v

= 6V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6V, R

= 5Ω

Ω

= 25°C, v

= 6V, R

≥

10Ω

Ω

= 1A, di

/dt = 1A/µs, t

= 20µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25°C, i

= 1A, di

/dt = 1A/µs

= T

vj max

, i

= 350A

= 100V, V

= 0,67 V

DRM

/dt = 20V/µs, -di

/dt = 10A/µs

5. Kennbuchstabe / 5th letter O

RMS, f = 50Hz, t = 1min

RMS, f = 50Hz, t = 1sec

= 92°C

= 25°C, t

= 10ms

= T

vj max

, t

= 10ms

= 25°C, t

= 10ms

= T

vj max

, t

= 10ms

DIN IEC 747-6

f = 50Hz, i

= 1A, di

/dt = 1A/µs

= T

vj max

, v

= 0,67 V

DRM

6. Kennbuchstabe / 6th letter F

DRM

, V

RRM

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1200, 1400

1600

1200, 1400

1600

1300, 1500

1700

450

285

9100

8000

414000

320000

250

A²s

A/µs

1000

V/µs

(TO)

, i

max.

1,48

0,8

0,65

mΩ

Ω

µs

max.

200

2,0

0,2

300

1200

3,0

typ.

ISOL

250

3,0

3,6

µs

Isolations-Prüfspannung

insulation test voltage

MOD-MA; R. Jörke

27. Nov 97

A 123/97

Seite/page 1(4)

TT285N12 Related Products

	TT285N12	TT285N14	TT285N16
Description	Trigger Device,	Trigger Device,	Trigger Device,
Maker	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	compliant	compliant
Base Number Matches	1	1	1

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