TPC6503
TOSHIBA Transistor
Silicon NPN Epitaxial Type
TPC6503
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
•
•
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.15 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
High-speed switching: t
f
= 45 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
t
=
10 s
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note)
T
j
T
stg
Rating
40
30
20
7
1.5
2.5
150
0.8
1.6
150
−55
to 150
Unit
V
V
V
V
A
mA
JEDEC
W
°C
°C
―
―
2-3S1A
JEITA
TOSHIBA
Weight: 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Conditions
V
CB
=
40 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.15 A
V
CE
=
2 V, I
C
=
0.5 A
I
C
=
0.5 A, I
B
=
10 mA
I
C
=
0.5 A, I
B
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
See Figure 1 circuit diagram.
V
CC
∼
12 V, R
L
=
24
Ω
−
I
B1
= −I
B2
=
17 mA
Min
⎯
⎯
20
400
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
18
43
295
45
Max
100
100
⎯
1000
⎯
0.12
1.10
⎯
⎯
⎯
⎯
ns
V
V
pF
Unit
nA
nA
V
1
2006-02-16
TPC6503
Transient Thermal Resistance
1000
r
th
– t
w
Transient thermal resistance
r
th
(°C/W)
100
10
Curves should be applied in thermal limited area.
この過渡熱抵抗データは熱抵抗制限領域にだけ適用されます。
Single nonrepetitive
=
25°C
単発パルス測定
Ta pulse Ta
=
25°C
Mounted on FR4
FR4
基板実装時
board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
(645mm
2
×
1.6 mm,
ガラスエポキシ,
Cu
面積
645 mm
2
)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe operating area
10
IC max (Pulse)*
10 ms* 1 ms* 100
μs*
100 ms*
10 s*
(A)
IC max (Continuous)*
1
DC
operation
Ta = 25°C
Collector current I
C
*:
Single nonrepetitive pulse
Ta
=
25°C
Note that the curves for 100 ms,
0.1 10 s and DC operation will be
different when the device aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2
).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
0.01
0.1
1
VCEO max
10
100
Collector−emitter voltage V
CE
(V)
4
2006-02-16
TPC6503
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-02-16
RF/Wirelessly
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