BSS135E-6288 datasheet, PDF - EEWORLD Datasheet

BSS135E-6288: DescriptionSmall Signal Field-Effect Transistor, 0.08A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS135E-6288 Overview

Small Signal Field-Effect Transistor, 0.08A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	0.08 A
Maximum drain-source on-resistance	60 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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