BS 107
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
S
Type
Pin 2
G
Marking
Pin 3
D
V
DS
200 V
I
D
0.13 A
R
DS(on)
26
Ω
Package
BS 107
Type
BS 107
TO-92
BS 107
Ordering Code
Q67000-S078
Tape and Reel Information
E6288
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
V
DS
V
DGR
200
V
200
V
GS
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
T
A
= 31 ˚C
±
20
Class 1
A
0.13
I
D
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
0.52
P
tot
Power dissipation
T
A
= 25 ˚C
W
1
Data Sheet
1
05.99
BS 107
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
-55 ... + 150
-55 ... + 150
˚C
≤
125
E
55 / 150 / 56
K/W
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
V
(BR)DSS
V
200
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
I
DSS
1.5
2
Zero gate voltage drain current
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 125 ˚C
V
DS
= 130 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 70 V,
V
GS
= 0.2 V,
T
j
= 25 ˚C
-
-
-
-
I
GSS
0.1
2
-
-
1
60
30
1
µA
nA
µA
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
1
10
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 0.12 A
V
GS
= 2.8 V,
I
D
= 0.02 A
Ω
-
-
14
14.5
26
28
Data Sheet
2
05.99
BS 107
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.12 A
g
fs
S
0.06
0.17
-
pF
-
60
80
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
8
12
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
3.5
5
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
-
t
r
5
8
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
-
t
d(off)
8
12
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
-
t
f
12
16
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
-
15
20
Data Sheet
3
05.99
BS 107
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
A
-
-
0.13
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
-
V
SD
-
0.52
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.5 A
-
0.9
1.2
Data Sheet
4
05.99
BS 107
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
4 V
0.14
A
0.12
1.2
W
1.0
P
tot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
D
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.2
0.1
0.0
0
20
40
60
80
100
120
˚C
160
0.02
0.01
0.00
0
20
40
60
80
100
120
˚C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25˚C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
240
V
230
V
(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
˚C
160
T
j
Data Sheet
5
05.99
京公网安备 11010802033920号
EEWORLD
