Standard SRAM, 256X4, CMOS, CDIP22,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Fairchild |
| package instruction | DIP, DIP22,.4 |
| Reach Compliance Code | compliant |
| JESD-30 code | R-XDIP-T22 |
| JESD-609 code | e0 |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Humidity sensitivity level | 2A |
| Number of terminals | 22 |
| word count | 256 words |
| character code | 256 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 250 |
| Certification status | Not Qualified |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| Base Number Matches | 1 |
| 4721BDCQM | 4721BDC | 4721BDCQR | |
|---|---|---|---|
| Description | Standard SRAM, 256X4, CMOS, CDIP22, | Standard SRAM, 256X4, CMOS, CDIP22, | Standard SRAM, 256X4, CMOS, CDIP22, |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Fairchild | Fairchild | Fairchild |
| package instruction | DIP, DIP22,.4 | DIP, DIP22,.4 | DIP, DIP22,.4 |
| Reach Compliance Code | compliant | compliant | compliant |
| JESD-30 code | R-XDIP-T22 | R-XDIP-T22 | R-XDIP-T22 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 1024 bit | 1024 bit | 1024 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 |
| Humidity sensitivity level | 2A | 2A | 2A |
| Number of terminals | 22 | 22 | 22 |
| word count | 256 words | 256 words | 256 words |
| character code | 256 | 256 | 256 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C |
| organize | 256X4 | 256X4 | 256X4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP22,.4 | DIP22,.4 | DIP22,.4 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 250 | 250 | 250 |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 30 | 30 | 30 |
| Base Number Matches | 1 | 1 | 1 |
| Certification status | Not Qualified | Not Qualified | - |
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