4721BDCQR datasheet, PDF - EEWORLD Datasheet

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4721BDCQR: DescriptionStandard SRAM, 256X4, CMOS, CDIP22,; Categorystorage storage; File Size159KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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4721BDCQR Overview

Standard SRAM, 256X4, CMOS, CDIP22,

4721BDCQR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Fairchild
package instruction	DIP, DIP22,.4
Reach Compliance Code	compliant
JESD-30 code	R-XDIP-T22
JESD-609 code	e0
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	2A
Number of terminals	22
word count	256 words
character code	256
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256X4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	250
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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4721BDCQR Related Products

	4721BDCQR	4721BDC	4721BDCQM
Description	Standard SRAM, 256X4, CMOS, CDIP22,	Standard SRAM, 256X4, CMOS, CDIP22,	Standard SRAM, 256X4, CMOS, CDIP22,
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Fairchild	Fairchild	Fairchild
package instruction	DIP, DIP22,.4	DIP, DIP22,.4	DIP, DIP22,.4
Reach Compliance Code	compliant	compliant	compliant
JESD-30 code	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22
JESD-609 code	e0	e0	e0
memory density	1024 bit	1024 bit	1024 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4
Humidity sensitivity level	2A	2A	2A
Number of terminals	22	22	22
word count	256 words	256 words	256 words
character code	256	256	256
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	256X4	256X4	256X4
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP22,.4	DIP22,.4	DIP22,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	250	250	250
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30
Base Number Matches	1	1	1
Certification status	-	Not Qualified	Not Qualified

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