1N4937GP datasheet, PDF - EEWORLD Datasheet

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1N4937GP: Description1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL; Categorysemiconductor Discrete semiconductor; File Size132KB，3 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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1N4937GP Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

1N4933GP

THRU

1N4937GP

Features

•

Glass Passivated Junction

Low Leakage Current

Metalurgically Bonded Construction

Low Cost

Fast Switching

•

Maximum Ratings

Operating Temperature: -55°C to + 150°C

-

Storage Temperature: - 55°C to +150°C

1

Maximum Thermal Resistance; 30

°C/W

Junction To Lead

Device

Marking

Maximum

Re

current

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

1 Amp Glass

Passivated Fast

Recovery Rectifier

50 - 600 Volts

DO-41

Catalog

Number

D

1N4933GP

1N4934GP

1N4935GP

1N4936GP

1N4937GP

1N4933GP

1N4934GP

1N4935GP

1N4936GP

1N4937GP

35V

70V

140V

280V

420V

A

Cathode

Mark

B

D

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

Typical Junction

Capacitance

I

F(AV)

I

FSM

1.0A

30A

T

A

=55°C

C

8.3ms, half sine

V

F

1.3V

I

FM

= 1.0A;

T

J

= 25°C*

T

J

= 25°C

T

J

= 100°C

T

J

= 125°C

I

F

=1.0A,

V

R

=30V

Measured at

1.0MHz,

V

R

=4.0V

DIMENSIONS

INCHES

MIN

.166

.080

.028

1.000

MM

MIN

4.10

2.00

.70

25.40

I

R

5.0µA

50µA

100µA

200ns

15pF

T

rr

C

J

DIM

A

B

C

D

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

---

NOTE

*Pulse test: Pulse width 300

µsec,

Duty cycle 1%

.

www

cnelectr.com

1N4937GP Related Products

	1N4937GP	1N4933GP	1N4935GP	1N4934GP	1N4936GP
Description	1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 50 V, SILICON, SIGNAL DIODE, DO-41	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, SILICON, SIGNAL DIODE, DO-41

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