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1N4933GP

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size132KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1N4933GP Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-41

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
1N4933GP
THRU
1N4937GP

Features
Glass Passivated Junction
Low Leakage Current
Metalurgically Bonded Construction
Low Cost
Fast Switching
Maximum Ratings
Operating Temperature: -55°C to + 150°C
-
Storage Temperature: - 55°C to +150°C
1
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
Device
Marking
Maximum
Re
current
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
1 Amp Glass
Passivated Fast
Recovery Rectifier
50 - 600 Volts
DO-41
Catalog
Number
D
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
35V
70V
140V
280V
420V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
I
F(AV)
I
FSM
1.0A
30A
T
A
=55°C
C
8.3ms, half sine
V
F
1.3V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
I
F
=1.0A,
V
R
=30V
Measured at
1.0MHz,
V
R
=4.0V
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
I
R
5.0µA
50µA
100µA
200ns
15pF
T
rr
C
J
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
.
www
cnelectr.com

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