EEWORLDEEWORLDEEWORLD

Part Number

Search

UPA1854GR-9JG

Description
Small Signal Field-Effect Transistor, 3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, TSSOP-8
CategoryDiscrete semiconductor    The transistor   
File Size66KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

UPA1854GR-9JG Overview

Small Signal Field-Effect Transistor, 3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, TSSOP-8

UPA1854GR-9JG Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1854
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1854 is a switching device which can be
driven directly by a 2.5
-
V power source.
The
µ
PA1854 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 60 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.5 A)
R
DS(on)2
= 70 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.5 A)
R
DS(on)3
= 105 mΩ MAX. (V
GS
= –2.5 V, I
D
= –1.5 A)
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1854GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–12
–10/+5
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Gate1
EQUIVALENT CIRCUIT
Drain1
Drain2
m
3.0
m
1
2
2.0
150
–55 to +150
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Gate2
Body
Diode
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
Source1
Gate
Protection
Diode
Source2
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13295EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
How to rotate components and modules in Allegro software?
The first step is to tell you how to rotate a single component. The first method is the Rotate command. This command is used in conjunction with the Move command. To execute the Move command, select t...
凡亿教育 PCB Design
Is there a 5v to 24v converter? Can you recommend one? The current is within 50mA.
I know there are a lot of chips, and I have to make boards after buying them, which is quite troublesome. I just want to make a module, like the one made by Jinshengyang, and use it directly....
youki12345 Power technology
PS2 serial protocol standard
PS2 serial protocol standard...
lorant Test/Measurement
Where can I download the Chinese version of ReAVR
Where can I download the Chinese version of ReAVR...
myseaweed Embedded System
Who can help me draw a schematic diagram of a power-off switch?
Well... First of all, I have been printing 3D products recently. After the photosensitive resin is printed, it still needs UV light curing, so I bought a lamp for girls to bake nail polish... Unfortun...
cardin6 Creative Market
Newbies ask for help with msp430g2553 breathing light routine
Is it possible to use the P1 port of g2553 to control the brightness changes of eight LEDs, giving the feeling of a shooting star, with the previous one being the brightest and then decreasing, and ha...
sda76767 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1515  60  1485  300  327  31  2  30  7  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号