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UNR6216

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size220KB,14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

UNR6216 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT1, 3 PIN

UNR6216 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTORS
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Transistors with built-in Resistor
UNR6211/6212/6213/6214/6215/6216/6217/
6218/6219/6210/621D/621E/621F/621K/621L
(UN6211/6212/6213/6214/6215/6216/6217/6218/6219/
6210/621D/621E/621F/621K/621L)
Unit: mm
Silicon NPN epitaxial planer transistor
For digital circuits
(0.7)
6.9
±0.1
(4.0)
2.5
±0.1
(0.8)
(1.0)
3.5
±0.1
0.65 max.
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
0.45
+0.10
–0.05
14.5
±0.5
s
Features
(0.85)
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
1.05
±0.05
2.5
±0.5
0.45
+0.10
–0.05
UNR6211
UNR6212
UNR6213
UNR6214
UNR6215
UNR6216
UNR6217
UNR6218
UNR6219
UNR6210
UNR621D
UNR621E
UNR621F
UNR621K
UNR621L
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
2.5
±0.5
1
2
3
1 : Emitter
2 : Collector
3 : Base
MT-1-A1 Pakage
Internal Connection
R1
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
Note) The Part numbers in the Parenthesis show conventional part number.
(0.8)
1
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