RF21923V
900MHz Lin-
ear Power
Amplifier
RF2192
3V 900MHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4mmx4mm
NOT FOR NEW DESIGNS
VCC BIAS
14
VCC1
VCC1
GND
Features
Single 3V Supply
29dBm Linear Output Power
37% Linear Efficiency
Low Power Mode
45 mA idle current
47% Peak Efficiency 31dBm Out-
put
GND
GND
RF IN
1
2
3
4
5
VREG1
16
15
13
12
11
10
RF OUT
RF OUT
RF OUT
6
VMODE
S
7
8
VREG2
BIAS GND
9
GND
Applications
3V CDMA/AMPS Cellular Hand-
sets
3V JCDMA Cellular Handsets
3V CDMA2000 Cellular Hand-
sets
3V TDMA/GAIT Cellular Hand-
sets
3V CDMA 450MHz Band Hand-
sets
Product Description
Portable Battery-Powered Equip-
ment
FO
R
NE
W
The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-
held systems. The device is manufactured on an advanced Gallium Arsenide Het-
erojunction Bipolar Transistor (HBT) process, and has been designed for use as the
final RF amplifier in dual-mode 3V CDMA/AMPS and CDMA2000 handheld digital
cellular equipment, spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2192 has a low power mode to extend battery
life under low output power conditions. The device is packaged in a 16-pin,
4mmx4mm QFN.
Ordering Information
RF2192
RF2192PCBA-41X
3V 900MHz Linear Power Amplifier
Fully Assembled Evaluation Board
NO
T
GaAs HBT
GaAs MESFET
InGaP HBT
DE
SI
GN
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Functional Block Diagram
Optimum Technology Matching® Applied
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2FO
1 of 12
RF2192
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
31dBm)
Mode Voltage (V
MODE
)
Control Voltage (V
REG
)
Input RF Power
Operating Case Temperature
Storage Temperature
Rating
+8.0
+5.2
+4.2
+3.0
+10
-30 to +110
-40 to +150
Unit
V
DC
V
DC
V
DC
V
DC
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Usable Frequency Range
High Power State-
US-CDMA (V
MODE
Low)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
Adjacent Channel Power Rejection
Input VSWR
Output VSWR
Noise Power
Min.
400
Specification
Typ.
Max.
960
Unit
MHz
Chondition
Case T=25°C, V
CC
=3.4V, V
REG
= 2.85V,
V
MODE
=0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
824
27
30
-33
29
<-60
37
-48
-58
2:1
NE
W
-133
824
19
22
-33
<-60
20
150
-48
<-60
2:1
16
Low Power State-
US-CDMA (V
MODE
High)
Frequency Range
Linear Gain
FO
R
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
NO
T
Max I
CC
Adjacent Channel Power Rejection
Input VSWR
Output VSWR
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DE
SI
GN
849
MHz
dB
dBc
dBc
dBm
%
-44
dBc
-56
dBc
10:1
6:1
dBm/Hz
849
MHz
dB
dBc
dBc
dBm
mA
-46
-58
10:1
6:1
dBc
dBc
S
No damage.
No damage.
P
OUT
=29dBm
ACPR@885kHz
ACPR@1980kHz
No oscillations. >-70dBc
At 45MHz offset
Case T=25°C, V
CC
=3.4V, V
REG
=2.85V,
V
MODE
=1.8V to 3V, Freq=824MHz to 849MHz
(unless otherwise specified)
P
OUT
=+16dBm (all currents included)
ACPR@885kHz
ACPR@1980kHz
No oscillations. >-70dBc
DS110304
RF2192
Parameter
High Power State CDMA 2000
1x (V
MODE
LOW)
Frequency Range
Linear Gain
Pilot+DCCH 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
Adjacent Channel Power Rejection
Pilot+FCH 9600+SCHO 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
Adjacent Channel Power Rejection
29
-47
<-60
dBm
dBc
dBc
4.5dB Peak Average Ratio at CCDF 1%
ACPR@885kHz
26.5
-47
<-60
dBm
dBc
dBc
2.5dB Backoff included in IS98D CCDF 1%
5.4dB Peak Average Ratio at CCDF 1%
ACPR@885kHz
ACPR@1.98MHz
824
29
849
MHz
dB
Min.
Specification
Typ.
Max.
Unit
Condition
Case T=25
o
C, V
CC
=3.4V, V
REG
=2.85V.
V
MODE
=0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
Frequency Range
Linear Gain
Pilot+DCCH 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
Adjacent Channel Power Rejection
Efficiency
Pilot+FCH 9600+SCHO 9600
Maximum Linear Output Power
(CDMA 2000 Modulation)
824
22
16
20
-48
15
16
<-85
Adjacent Channel Power Rejection
NE
W
<-50
<-65
824
30
-33
<-60
32
47
2:1
10:1
6:1
849
31
20
FM Mode
Frequency Range
Gain
FO
R
Second Harmonic
Third Harmonic
Max CW Output Power
Total Efficiency (AMPS mode)
NO
T
Input VSWR
Output VSWR
Note: DCCH: Dedicated Control Channel
FCH: Fundamental Channel
CCDF: Complementary Cumulative Distribution Function
DS110304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DE
SI
GN
849
MHz
dB
dBm
dBc
%
dBc
dBm
dBc
dBc
MHz
dB
dBc
dBc
dBm
%
Low Power State CDMA 2000
1x (V
MODE
HIGH)
S
No damage.
ACPR@1.98MHz
Case T=25
o
C, V
CC
=3.4V, V
REG
=2.85V.
V
MODE
=1.8V to 3V, Freq=824MHz to 849MHz
5.4dB Peak to Average Ratio at CCDF 1%
ACPR@885kHz
ACPR@1.98MHz
P
OUT
=20dBm
4.5dB Peak to Average Ratio at CCDF 1%
ACPR@885kHz
ACPR@1.98MHz
Case T=25°C, V
CC
=3.4V, V
REG
=2.85V,
V
MODE
=0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
P
OUT
=31dBm (room temperature)
No oscillations. >-70dBc
3 of 12
RF2192
Parameter
High Power State-CDMA450
(V
MODE
Low)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
Adjacent Channel Power Rejection
Input VSWR
Output VSWR
29
35
-49
-56
2:1
10:1
6:1
No damage.
452
31
30
-60
458
MHz
dB
dBc
dBc
dBm
%
dBc
dBc
P
OUT
=29dBm
ACPR @ 885kHz
ACPR @ 1980kHz
Min.
Specification
Typ.
Max.
Unit
Condition
Case T=25
o
C, V
CC
=3.4V, V
REG
=2.85V,
V
MODE
=0V to 0.5V, Freq=452MHz to 458MHz
(unless otherwise specified)
Frequency Range
Linear Gain
Maximum Linear Output Power
(CDMA Modulation)
Max I
CC
Adjacent Channel Power Rejection
Input VSWR
Output VSWR
452
16
23
160
-52
-70
2:1
NE
W
3.0
3.4
160
45
0
2.75
0
1.8
2.85
2.85
DC Supply
Supply Voltage
Quiescent Current
V
REG
Current
FO
R
V
MODE
Current
Turn On/Off Time
NO
T
Total Current (Power Down)
V
REG
“Low” Voltage
V
REG
“High” Voltage
V
MODE
“Low” Voltage
V
MODE
“High” Voltage
4 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DE
SI
GN
458
MHz
dB
dBm
mA
dBc
dBc
10:1
6:1
4.2
V
mA
70
10
1
<40
mA
mA
mA
s
10
0.5
2.95
0.5
3.0
A
V
V
V
V
Low Power State-CDMA450
(V
MODE
High)
S
No damage.
V
MODE
=Low
V
MODE
=High
V
REG
=Low
No oscillations. > -70dBc
Case T=25
o
C, V
CC
=3.4V, V
REG
=2.85V,
V
MODE
=2.85V, Freq=452MHz to 458MHz
(unless otherwise specified)
P
OUT
=+16dBm (all currents included)
ACPR @ 885kHz
ACPR @ 1980kHz
No oscillations. > -70dBc
The maximum power out for V
CC
=3.0V is
28dBm.
Time between V
REG
turned on and PA reaching
full power. Turn on/off time can be reduced by
lowering the bypass capacitor value on the
V
REG
line.
DS110304
RF2192
Pin
1
2
3
4
Function
GND
GND
GND
RF IN
Description
Ground connection.
Ground connection.
Ground connection.
RF input. An external 100pF series capacitor is required as a DC block. In
addition, shunt inductor and series capacitor are required to provide
2:1VSWR.
RF IN
From
Bias
GND1
Stages
VCC1
100 pF
Interface Schematic
5
6
7
8
9
10
VREG1
VMODE
VREG2
BIAS GND
GND
RF OUT
Power Down control for first stage. Regulated voltage supply for amplifier
bias. In Power Down mode, both V
REG
and V
MODE
need to be LOW (<0.5V).
For nominal operation (High Power Mode), V
MODE
is set LOW. When set
HIGH, the driver and final stage are dynamically scaled to reduce the
device size and as a result to reduce the idle current.
Power Down control for the second stage. Regulated voltage supply for
amplifier bias. In Power Down mode, both V
REG
and V
MODE
need to be LOW
(<0.5V).
Bias circuitry ground. See application schematic.
Ground connection.
RF output and power supply for final stage. This is the unmatched collector
output of the second stage. A DC block is required following the matching
components. The biasing may be provided via a parallel L-C set for reso-
nance at the operating frequency of 824MHz to 849MHz. It is important to
select an inductor with very low DC resistance with a 1A current rating.
Alternatively, shunt microstrip techniques are also applicable and provide
very low DC resistance. Low frequency bypassing is required for stability.
Same as pin 10.
Same as pin 10.
DE
SI
GN
S
RF OUT
F ro m B ia s
S ta g e s
14
15
16
Pkg
Base
VCC BIAS
VCC1
VCC1
GND
Harmonic trap. This pin connects to the RF output but is used for providing
a low impedance to the second harmonic of the operating frequency. An
inductor or transmission line resonating with an on chip capacitor at 2fo is
required at this pin.
Power supply for bias circuitry. A 100pF high frequency bypass capacitor is
recommended.
Power supply for first stage.
Same as Pin 15.
Ground connection. The backside of the package should be soldered to a
top side ground pad which is connected to the ground plane with multiple
vias. The pad should have a short thermal path to the ground plane.
NO
T
DS110304
FO
R
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NE
W
11
12
13
RF OUT
RF OUT
2FO
See pin 10.
5 of 12
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